Organic semiconducting single crystals as solid-state sensors for ionizing radiation

2014 ◽  
Vol 174 ◽  
pp. 219-234 ◽  
Author(s):  
Beatrice Fraboni ◽  
Andrea Ciavatti ◽  
Laura Basiricò ◽  
Alessandro Fraleoni-Morgera
Keyword(s):  
Ionizing Radiation ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Radiation Detectors ◽  
Direct Conversion ◽  
Electrical Signal ◽  
Ambient Atmosphere ◽  
High Radiation

So far, organic semiconductors have been mainly proposed as detectors for ionizing radiation in the indirect conversion approach, i.e. as scintillators, which convert ionizing radiation into visible photons, or as photodiodes, which detect visible photons coming from a scintillator and convert them into an electrical signal. The direct conversion of ionizing radiation into an electrical signal within the same device is a more effective process than indirect conversion, since it improves the signal-to-noise ratio and it reduces the device response time. We report here the use of Organic Semiconducting Single Crystals (OSSCs) as intrinsic direct ionizing radiation detectors, thanks to their stability, good transport properties and large interaction volume. Ionizing radiation X-ray detectors, based on low-cost solution-grown OSSCs, are here shown to operate at room temperature, providing a stable linear response with increasing dose rate in the ambient atmosphere and in high radiation environments.

scholarly journals Halide lead perovskites for ionizing radiation detection

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Haotong Wei ◽  
Jinsong Huang
Keyword(s):  
Ionizing Radiation ◽  
High Performance ◽  
Direct Detection ◽  
Low Cost ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Solution Processes ◽  
Current State ◽  
X Ray Imaging ◽  
Halide Perovskites

Abstract Halide lead perovskites have attracted increasing attention in recent years for ionizing radiation detection due to their strong stopping power, defect-tolerance, large mobility-lifetime (μτ) product, tunable bandgap and simple single crystal growth from low-cost solution processes. In this review, we start with the requirement of material properties for high performance ionizing radiation detection based on direct detection mechanisms for applications in X-ray imaging and γ-ray energy spectroscopy. By comparing the performances of halide perovskites radiation detectors with current state-of-the-art ionizing radiation detectors, we show the promising features and challenges of halide perovskites as promising radiation detectors.

scholarly journals MODEL OF PHYSICAL PROCESSES IN PRIMARY AND SECONDARY CONVERTERS OF THE DETECTOR

2021 ◽  
pp. 5-15
Author(s):  
O.V. Banzak ◽  
A.V. Sieliykov ◽  
S.V. Dobrovolskaya ◽  
O.I. Konovalenko
Keyword(s):  
Ionizing Radiation ◽  
Signal To Noise Ratio ◽  
Radiation Detector ◽  
Pulse Amplitude ◽  
Electrical Signal ◽  
Physical Analysis ◽  
Primary Converter ◽  
Radiation Sensor ◽  
A Charge ◽  
Nuclear Instrumentation

The level of development and application of radiation technologies is largely determined by the state of nuclear instrumentation. The advent of modern semiconductor sensors for the first time linked nuclear instrumentation and electronics into a single complex - semiconductor detector. It combines semiconductor primary converter of ionizing radiation (sensor), a secondary converter of information from the sensor (electronics) and software for processing this information, interconnected in terms of the problem being solved and parameters. The structural diagram of detector consists of two main parts: a primary converter of ionizing radiation (IR) energy into an electrical signal - a sensor; secondary converter of this electrical signal. The characteristics of detector are mainly determined by the physical properties of the semiconductor crystal as a sensitive element of the primary converter, as well as by the features of the process of recording an electrical signal. The process of registering an IR consists in converting a non-electrical quantity characterizing it into an electrical signal. In other words, this converts one type of energy - the energy of IR - into another, more convenient for processing and accumulating information. A current or voltage pulse arises in the radiation sensor directly as a result of ionization of its active medium - a semiconductor; this pulse carries extensive information. First of all, it is correlated with the moment of time of the nuclear process. In addition, the pulse marks the fact that radiation is emitted within the solid angle at which the sensor is visible from the source. Pulse amplitude is often a measure of the energy loss of radiation in the sensor. The pulse shape is different for different types of radiation, as well as for different areas and angles of radiation hitting the sensor. In this work, a model of a gamma radiation detector has been created as a single system of primary and secondary converters. It contains physical analysis and analytical presentation of the processes occurring in the CdZnTe-sensor and electronic preamplifier. It is shown that the charge collection in the sensor differs in time, which leads to a spread of signal pulses in duration and amplitude. In this regard, model shows the need to use a charge-sensitive preamplifier. The main advantage of the model is solution to problem of optimizing signal-to-noise ratio in detector.

Synthesis of cerium fluoride single crystals: A promising material for ionizing radiation detectors

Atomic Energy ◽  
1997 ◽  
Vol 82 (4) ◽  
pp. 294-301 ◽  
Author(s):  
E. N. Zvonarev ◽  
O. I. Kozlov ◽  
D. F. Kolegov ◽  
V. P. Mashirev ◽  
V. V. Shatalov ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Single Crystals ◽  
Radiation Detectors ◽  
Promising Material ◽  
Cerium Fluoride

scholarly journals Radiation Detectors: Ionizing Radiation Detectors Based on Solution-Grown Organic Single Crystals (Adv. Funct. Mater. 14/2016)

2016 ◽  
Vol 26 (14) ◽  
pp. 2222-2222
Author(s):  
Beatrice Fraboni ◽  
Alessandro Fraleoni-Morgera ◽  
Natalia Zaitseva
Keyword(s):  
Ionizing Radiation ◽  
Single Crystals ◽  
Radiation Detectors

Ionizing Radiation Detectors Based on Solution-Grown Organic Single Crystals

2015 ◽  
Vol 26 (14) ◽  
pp. 2276-2291 ◽  
Author(s):  
Beatrice Fraboni ◽  
Alessandro Fraleoni-Morgera ◽  
Natalia Zaitseva
Keyword(s):  
Ionizing Radiation ◽  
Single Crystals ◽  
Radiation Detectors

Adaptive identification methods of nonlinear random electrical signal

2020 ◽  
Vol 64 (1-4) ◽  
pp. 431-438
Author(s):  
Jian Liu ◽  
Lihui Wang ◽  
Zhengqi Tian
Keyword(s):  
Wavelet Transform ◽  
Electric Vehicle ◽  
Signal To Noise Ratio ◽  
Sudden Change ◽  
Electrical Signal ◽  
Signal Recognition ◽  
State Variable ◽  
Signal Characteristics ◽  
The Matrix ◽  
Kalman Filter Algorithm

The nonlinearity of the electric vehicle DC charging equipment and the complexity of the charging environment lead to the complex and changeable DC charging signal of the electric vehicle. It is urgent to study the distortion signal recognition method suitable for the electric vehicle DC charging. Focusing on the characteristics of fundamental and ripple in DC charging signal, the Kalman filter algorithm is used to establish the matrix model, and the state variable method is introduced into the filter algorithm to track the parameter state, and the amplitude and phase of the fundamental waves and each secondary ripple are identified; In view of the time-varying characteristics of the unsteady and abrupt signal in the DC charging signal, the stratification and threshold parameters of the wavelet transform are corrected, and a multi-resolution method is established to identify and separate the unsteady and abrupt signals. Identification method of DC charging distortion signal of electric vehicle based on Kalman/modified wavelet transform is used to decompose and identify the signal characteristics of the whole charging process. Experiment results demonstrate that the algorithm can accurately identify ripple, sudden change and unsteady wave during charging. It has higher signal to noise ratio and lower mean root mean square error.

scholarly journals Efficient Estimation of CFO-Affected OFDM BER Floor in Small Cells with Resource-Limited IoT End-Points

Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3747
Author(s):  
Adriana Lipovac ◽  
Vlatko Lipovac ◽  
Borivoj Modlic
Keyword(s):  
Orthogonal Frequency Division Multiplexing ◽  
Carrier Frequency Offset ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Error Recovery ◽  
Efficient Estimation ◽  
Analytical Models ◽  
Small Cells ◽  
End Points ◽  
Power Delay Profile

Contemporary wireless networks dramatically enhance data rates and latency to become a key enabler of massive communication among various low-cost devices of limited computational power, standardized by the Long-Term Evolution (LTE) downscaled derivations LTE-M or narrowband Internet of Things (NB IoT), in particular. Specifically, assessment of the physical-layer transmission performance is important for higher-layer protocols determining the extent of the potential error recovery escalation upwards the protocol stack. Thereby, it is needed that the end-points of low processing capacity most efficiently estimate the residual bit error rate (BER) solely determined by the main orthogonal frequency-division multiplexing (OFDM) impairment–carrier frequency offset (CFO), specifically in small cells, where the signal-to-noise ratio is large enough, as well as the OFDM symbol cyclic prefix, preventing inter-symbol interference. However, in contrast to earlier analytical models with computationally demanding estimation of BER from the phase deviation caused by CFO, in this paper, after identifying the optimal sample instant in a power delay profile, we abstract the CFO by equivalent time dispersion (i.e., by additional spreading of the power delay profile that would produce the same BER degradation as the CFO). The proposed BER estimation is verified by means of the industry-standard LTE software simulator.

Fused Ambipolar Aza-isoindigos with NIR absorption

2021 ◽  
Author(s):  
Liping Yao ◽  
Danlei Zhu ◽  
Hailiang Liao ◽  
Sheik Haseena ◽  
Mahesh kumar Ravva ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
High Performance ◽  
Low Cost ◽  
Light Weight ◽  
The Past ◽  
Pi Conjugated ◽  
Nir Absorption ◽  
Conjugated Organic Semiconductors

Due to their advantages of low-cost, light-weight, and mechanical flexibility, much attention has been focused on pi-conjugated organic semiconductors. In the past decade, although many materials with high performance has...

scholarly journals All-Optical Non-Inverted Parity Generator and Checker Based on Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (4) ◽  
pp. 1499
Author(s):  
Bingchen Han ◽  
Junyu Xu ◽  
Pengfei Chen ◽  
Rongrong Guo ◽  
Yuanqi Gu ◽  
...  
Keyword(s):  
Optical Amplifiers ◽  
Signal To Noise Ratio ◽  
Low Cost ◽  
Extinction Ratio ◽  
Semiconductor Optical Amplifiers ◽  
Optical Signal ◽  
Probe Light ◽  
All Optical ◽  
Negative Effect ◽  
Parity Generator

An all-optical non-inverted parity generator and checker based on semiconductor optical amplifiers (SOAs) are proposed with four-wave mixing (FWM) and cross-gain modulation (XGM) non-linear effects. A 2-bit parity generator and checker using by exclusive NOR (XNOR) and exclusive OR (XOR) gates are implemented by first SOA and second SOA with 10 Gb/s return-to-zero (RZ) code, respectively. The parity and check bits are provided by adjusting the center wavelength of the tunable optical bandpass filter (TOBPF). A saturable absorber (SA) is used to reduce the negative effect of small signal clock (Clk) probe light to improve extinction ratio (ER) and optical signal-to-noise ratio (OSNR). For Pe and Ce (even parity bit and even check bit) without Clk probe light, ER and OSNR still maintain good performance because of the amplified effect of SOA. For Po (odd parity bit), ER and OSNR are improved to 1 dB difference for the original value. For Co (odd check bit), ER is deteriorated by 4 dB without SA, while OSNR is deteriorated by 12 dB. ER and OSNR are improved by about 2 dB for the original value with the SA. This design has the advantages of simple structure and great integration capability and low cost.

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