Thin film synthesis and properties of copper nitride, a metastable semiconductor

2014 ◽  
Vol 1 (4) ◽  
pp. 424-430 ◽  
Author(s):  
Christopher M. Caskey ◽  
Ryan M. Richards ◽  
David S. Ginley ◽  
Andriy Zakutayev
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
High Throughput ◽  
Reactive Sputtering ◽  
Combinatorial Approach ◽  
Copper Nitride ◽  
Substrate Distance ◽  
Film Synthesis

Copper nitride (Cu3N) thin films were grown by reactive sputtering using a high-throughput combinatorial approach with orthogonal gradients of substrate temperature and target–substrate distance.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Copper nitride thin films prepared by radio‐frequency reactive sputtering

1995 ◽  
Vol 78 (6) ◽  
pp. 4104-4107 ◽  
Author(s):  
Toshiro Maruyama ◽  
Tomonori Morishita
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Copper Nitride

Optical Characterization of LaF3 by Variable Angle Purged UV Spectroscopic Ellipsometry

2013 ◽  
Vol 662 ◽  
pp. 243-248
Author(s):  
Wen Yuan Deng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Optical Characterization ◽  
Theory Model ◽  
Material Dispersion ◽  
Optical Index ◽  
Variable Angle ◽  
Selection Of

The optical characterization of LaF3 thin film in DUV spectral range was experimental investigated by using a variable angle purged UV spectroscopic ellipsometer. In order to take into account the inhomogeneity, a theory model that dividing the single thin film into several sublayers was adopted. Two kinds of LaF3 thin films fabricated on fused silicate substrate with different substrates temperature were tested. From the obtained optical index and the physical thickness of different sublayer in the two different kinds of LaF3 thin films, it was found that, the inhomogeneity of the LaF3 thin film deposited with substrate temperature at 300°C was stronger than that of the LaF3 thin film deposited with substrate temperature at 250°C, indicating that the substrate temperature has important influence on the optical index and inhomogeneity of LaF3 thin films. For both of the two kinds LaF3 thin films, the agreement between the measured transmittance and the simulated transmittance using the parameters from regression of SE was nice, indicating that the selection of the material dispersion law and regression procedure were successful.

Thin Film Depositions of CdTe Semiconductors on Amorphous and Single Crystal Substrates and Comparisons of their Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Indium Doping ◽  
Sapphire Single Crystal ◽  
Cdte Thin Films ◽  
The Difference

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.

Niobium and zirconium telluride thin films prepared by sputtering

1999 ◽  
Vol 14 (5) ◽  
pp. 2070-2079 ◽  
Author(s):  
Daniel Pailharey ◽  
Yves Mathey ◽  
Mohamad Kassem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Large Range ◽  
Sputter Deposition ◽  
The Other ◽  
Striking Feature ◽  
Structural Types ◽  
The One ◽  
Film Form

A versatile procedure of sputter deposition, well-adapted for getting a large range of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium polytellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe0.72 to ZrTe6.7, on the one hand, and from NbTe1.28 to NbTe7.84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk MTex reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable amounts of Te and M atoms trapped or intercalated within the parent structures.

Compositional dependence of thin films of BiPbSrCaCuO on target to substrate distance

1995 ◽  
Vol 73 (1-2) ◽  
pp. 35-37
Author(s):  
J. Murdoch ◽  
F. S. Razavi ◽  
J. A. Moore
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Atomic Composition ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Distance ◽  
Radioisotope Source ◽  
Complex Variation

Using magnetron sputtering techniques, several thin films of superconducting BiPbSrCaCuO were fabricated by varying the distance between the substrate (single crystal of MgO with polished (100) plane) and the targets. During the deposition the gas pressure was kept constant at 0.3 mbar (1 mbar = 0.1 kPa) and the substrate temperature was kept at 700 °C. An energy-dispersive X-ray fluorescence was designed using a radioisotope source with a secondary target and a Si(Li) X-ray spectrometer and it was used to measure the atomic composition of the film quantitatively. It was found that the Ca concentration relative to Sr increases linearly as the distance between the substrate and the targets increases. However, both Cu and Bi show a more complex variation of concentration with distance. The X-ray diffraction results also indicated that the films are grown epitaxially along the C axis, which showed a semiconducting behaviour with TC,zero below 60 K.

Electrodeposition of lithium phthalocyanine thin films: Part I. Structure and morphology

1999 ◽  
Vol 14 (5) ◽  
pp. 2162-2172 ◽  
Author(s):  
M. Brinkmann ◽  
S. Graff ◽  
C. Chaumont ◽  
J-J. André
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxidation Potential ◽  
Thin Film Growth ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Film Synthesis

A new thin film synthesis route based on the electrochemical oxidation of PcLi2 and deposition of lithium phthalocyanine (PcLi) onto indium tin oxide (ITO) substrate is demonstrated. The effects on the thin film morphology of various parameters such as the electrolysis time, the nature of the solvent, and the oxidation potential are investigated. The thin film growth is studied via x-ray diffraction, potential step experiments, and ex situ scanning electron microscopy. Various morphologies of the x-form thin films are observed for different electrolysis times and solvents. Thin films grown in acetonitrile of thickness above 1 μm consist in unidirectionally oriented needle-shaped crystallites.

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