Compositional dependence of thin films of BiPbSrCaCuO on target to substrate distance

1995 ◽  
Vol 73 (1-2) ◽  
pp. 35-37
Author(s):  
J. Murdoch ◽  
F. S. Razavi ◽  
J. A. Moore
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Atomic Composition ◽  
Compositional Dependence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Distance ◽  
Radioisotope Source ◽  
Complex Variation

Using magnetron sputtering techniques, several thin films of superconducting BiPbSrCaCuO were fabricated by varying the distance between the substrate (single crystal of MgO with polished (100) plane) and the targets. During the deposition the gas pressure was kept constant at 0.3 mbar (1 mbar = 0.1 kPa) and the substrate temperature was kept at 700 °C. An energy-dispersive X-ray fluorescence was designed using a radioisotope source with a secondary target and a Si(Li) X-ray spectrometer and it was used to measure the atomic composition of the film quantitatively. It was found that the Ca concentration relative to Sr increases linearly as the distance between the substrate and the targets increases. However, both Cu and Bi show a more complex variation of concentration with distance. The X-ray diffraction results also indicated that the films are grown epitaxially along the C axis, which showed a semiconducting behaviour with TC,zero below 60 K.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

Influence of Substrate Temperature on the Al and Zr Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 814 ◽  
pp. 601-606 ◽  
Author(s):  
Fei Huan ◽  
Jin Feng Leng ◽  
Zhi Chao Meng ◽  
Bin Sun ◽  
Wen Shuang He
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Influence Of Substrate ◽  
Co Doped

ZnO doped Al2O3and ZrO2(ZAZO) thin films were deposited by the radio frequency magnetron sputtering on substrate temperature with 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-probe tester. The results showed that the substrate temperature obviously influenced the grain size of ZAZO films. The ZnO thin film had the largest crystallization orientation for the (002) peak and the smallest FWHM value at substrate temperature of 250°C. As the temperature increasing, the resistance of films gradually decreased till reaching a minimum at 250°C and then rised. Due to the increasing of Al and Zr concentrations into ZnO lattice, the Al ions created an abundance number of free electrons in the ZnO lattice, and in turn, the electrical conductivity increased. In addition, the improvement of film in the crystalline state results in the film resistivity decreases.

The Effects of Various Substrate Temperature of Bi2O3 Buffer Layer on SBT (SrBi2Ta2O9) Thin Films Deposited by R.F. Magnetron Sputtering

2008 ◽  
Vol 569 ◽  
pp. 137-140
Author(s):  
Ji Eon Yoon ◽  
Won Hyo Cha ◽  
Dong Hyun Hwang ◽  
Chul Su Lee ◽  
In Seok Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Ferroelectric Properties ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lower Temperature ◽  
Temperature Crystallization

The SBT(SrBi2Ta2O9) thin films with Bi2O3 buffer layer were deposited on Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth due to its volatility during the process results in an obvious non stoichiometry of the films and the presence of secondary phases. Bi2O3 buffer layer was found to be effective to achieve lower temperature crystallization and improve ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various substrate temperature of Bi2O3 buffer layer were observed, using X-Ray Diffraction (XRD), Precision LC (Radient Technologies. Inc.) and GDS (glow discharge spectrometer).

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

2019 ◽  
Vol 397 ◽  
pp. 118-124
Author(s):  
Linda Aissani ◽  
Khaoula Rahmouni ◽  
Laala Guelani ◽  
Mourad Zaabat ◽  
Akram Alhussein
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Annealing Temperature ◽  
Diffusion Mechanism ◽  
X Ray Diffraction ◽  
Chromium Carbides ◽  
X Ray ◽  
Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

scholarly journals X-ray Diffraction Investigation of Stainless Steel—Nitrogen Thin Films Deposited Using Reactive Sputter Deposition

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 984
Author(s):  
Faisal I. Alresheedi ◽  
James E. Krzanowski
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Peak Shift ◽  
304 Stainless Steel ◽  
Tetragonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Area Detector ◽  
Calculated Parameter

An X-ray diffraction investigation was carried out on nitrogen-containing 304 stainless steel thin films deposited by reactive rf magnetron sputtering over a range of substrate temperature and bias levels. The resulting films contained between ~28 and 32 at.% nitrogen. X-ray analysis was carried out using both the standard Bragg-Brentano method as well as area-detector diffractometry analysis. The extent of the diffraction anomaly ((002) peak shift) was determined using a calculated parameter, denoted RB, which is based on the (111) and (002) peak positions. The normal value for RB for FCC-based structures is 0.75 but increases as the (002) peak is anomalously displaced closer to the (111) peak. In this study, the RB values for the deposited films were found to increase with substrate bias but decrease with substrate temperature (but still always >0.75). Using area detector diffractometry, we were able to measure d111/d002 values for similarly oriented grains within the films, and using these values calculate c/a ratios based on a tetragonal-structure model. These results allowed prediction of the (002)/(200) peak split for tetragonal structures. Despite predicting a reasonably accessible split (~0.6°–2.9°–2θ), no peak splitting observed, negating the tetragonal-structure hypothesis. Based on the effects of film bias/temperature on RB values, a defect-based hypothesis is more viable as an explanation for the diffraction anomaly.

MICROSTRUCTURES OF SPUTTERED ORIENTED Si/CeO2 BILAYERs YBa2Cu3O7-δ/Si INTEGRATED MICROELECTRONICS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 848-854 ◽  
Author(s):  
A. CHIODONI ◽  
E. MEZZETTI ◽  
D. BOTTA ◽  
L. GOZZELINO ◽  
B. MINETTI ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cerium Dioxide ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Integrated Electronics ◽  
Lattice Matching ◽  
Deposition Techniques

In the framework of a research aimed to superconductor/semiconductor integrated electronics, we have grown a-axis oriented YBa 2 Cu 3 O 7-δ (YBCO) thin films on silicon (100) substrates with (111) oriented insulating buffer layers of cerium dioxide ( CeO 2), using magnetron sputtering deposition techniques. The properties of the cerium dioxide layer have been preliminary optimized by means of several layout and by monitoring the growing procedures through X-ray diffraction, AFM and TEM techniques. The lattice matching between CeO 2 and YBCO resulted to be worsened by an amorphous thin SiO 2 layer at the Si/CeO 2 interface, that decouples the buffer orientation from the seed orientation. However, it was possible to grow a relatively thick, optimally textured layer of CeO 2 without spurious orientations. The YBCO films deposited on top of this layer result preferentially a-axis oriented. The transition widths are very large, jet well controllable and reproducible. Some technological applications can be already envisaged.

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