Niobium and zirconium telluride thin films prepared by sputtering

1999 ◽  
Vol 14 (5) ◽  
pp. 2070-2079 ◽  
Author(s):  
Daniel Pailharey ◽  
Yves Mathey ◽  
Mohamad Kassem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Large Range ◽  
Sputter Deposition ◽  
The Other ◽  
Striking Feature ◽  
Structural Types ◽  
The One ◽  
Film Form

A versatile procedure of sputter deposition, well-adapted for getting a large range of Te/M ratios (with M = Zr or Nb), has led to the synthesis of several highly anisotropic zirconium and niobium polytellurides in thin film form. Upon tuning the two key parameters of the process, i.e., the Te percentage in the target and the substrate temperature during the deposition, preparation of systems ranging from ZrTe0.72 to ZrTe6.7, on the one hand, and from NbTe1.28 to NbTe7.84, on the other, has been achieved. Besides their amorphous or crystalline (with or without preferential orientations) behavior and their relationship to known structural types, the most striking feature of these films is their large departure from the stoichiometry of the bulk MTex reference compounds. This peculiarity, together with the possible changes of composition under annealing, are described and interpreted in terms of variable amounts of Te and M atoms trapped or intercalated within the parent structures.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Optical Characterization of LaF3 by Variable Angle Purged UV Spectroscopic Ellipsometry

2013 ◽  
Vol 662 ◽  
pp. 243-248
Author(s):  
Wen Yuan Deng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Optical Characterization ◽  
Theory Model ◽  
Material Dispersion ◽  
Optical Index ◽  
Variable Angle ◽  
Selection Of

The optical characterization of LaF3 thin film in DUV spectral range was experimental investigated by using a variable angle purged UV spectroscopic ellipsometer. In order to take into account the inhomogeneity, a theory model that dividing the single thin film into several sublayers was adopted. Two kinds of LaF3 thin films fabricated on fused silicate substrate with different substrates temperature were tested. From the obtained optical index and the physical thickness of different sublayer in the two different kinds of LaF3 thin films, it was found that, the inhomogeneity of the LaF3 thin film deposited with substrate temperature at 300°C was stronger than that of the LaF3 thin film deposited with substrate temperature at 250°C, indicating that the substrate temperature has important influence on the optical index and inhomogeneity of LaF3 thin films. For both of the two kinds LaF3 thin films, the agreement between the measured transmittance and the simulated transmittance using the parameters from regression of SE was nice, indicating that the selection of the material dispersion law and regression procedure were successful.

scholarly journals Disconnecting structure and dynamics in glassy thin films

2017 ◽  
Vol 114 (40) ◽  
pp. 10601-10605 ◽  
Author(s):  
Daniel M. Sussman ◽  
Samuel S. Schoenholz ◽  
Ekin D. Cubuk ◽  
Andrea J. Liu
Keyword(s):  
Thin Film ◽  
Machine Learning ◽  
Thin Films ◽  
Predictive Models ◽  
Local Structure ◽  
The Other ◽  
Microscopic Structure ◽  
Glassy Dynamics ◽  
Structure And Dynamics ◽  
Machine Learning Methods

Nanometrically thin glassy films depart strikingly from the behavior of their bulk counterparts. We investigate whether the dynamical differences between a bulk and thin film polymeric glass former can be understood by differences in local microscopic structure. Machine learning methods have shown that local structure can serve as the foundation for successful, predictive models of particle rearrangement dynamics in bulk systems. By contrast, in thin glassy films, we find that particles at the center of the film and those near the surface are structurally indistinguishable despite exhibiting very different dynamics. Next, we show that structure-independent processes, already present in bulk systems and demonstrably different from simple facilitated dynamics, are crucial for understanding glassy dynamics in thin films. Our analysis suggests a picture of glassy dynamics in which two dynamical processes coexist, with relative strengths that depend on the distance from an interface. One of these processes depends on local structure and is unchanged throughout most of the film, while the other is purely Arrhenius, does not depend on local structure, and is strongly enhanced near the free surface of a film.

Thin Film Depositions of CdTe Semiconductors on Amorphous and Single Crystal Substrates and Comparisons of their Properties

2010 ◽  
Vol 638-642 ◽  
pp. 2909-2914 ◽  
Author(s):  
Yuichi Sato ◽  
Tatsushi Kodate ◽  
Manabu Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Indium Doping ◽  
Sapphire Single Crystal ◽  
Cdte Thin Films ◽  
The Difference

Thin films of CdTe semiconductors were prepared on sapphire single crystal and quartz glass substrates by a vacuum evaporation method. Crystallinity and photoluminescence properties of the obtained CdTe thin films on the substrates were semi-quantitatively compared concerning the difference of the substrate materials. Dependences of the properties on the substrate temperature in the preparations and indium doping to the thin films were also investigated.

Optical and electrical properties of Ge10+xSe40Te50−x thin film

2001 ◽  
Vol 16 (6) ◽  
pp. 1549-1553 ◽  
Author(s):  
S. A. Fayek ◽  
M. El-Ocker ◽  
A. S. Hassanien
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
The Other ◽  
Electrical Activation ◽  
Optical And Electrical Properties ◽  
Vacuum Deposition ◽  
Band Tail ◽  
Reflection And Transmission ◽  
Opposite Behavior

Thin films with thickness 100 nm of Ge10+xSe40Te50−x (x ranging from 0.0 to 16.65 at.%) were formed by vacuum deposition at 1.33 × 10−4 Pa. The change in electrical resistivity of the films has been measured using the coplanar method. The measurements have been carried out in a temperature range between 400 and 142 K. The values of the electrical activation energies lie in the range of 0.18–0.38 eV. The optical absorption behavior of these ternary thin films was studied from the reflection and transmission. The optical band gap was found to be in the range of 0.90–1.11 eV and arose from indirect transitions. On the other hand, the width of the band tail Ee was found in the range 0.19–0.32 eV and exhibits opposite behavior. This behavior is believed to be associated with a defected bond of Te–Te and a cohesive energy (CE).

Micro Texture Dependence of Both the Mechanical and Electrical Properties of Electroplated Copper Thin Films Used for Interconnection

2010 ◽  
Author(s):  
Naokazu Murata ◽  
Naoki Saito ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Fracture Mode ◽  
The Other ◽  
Copper Films ◽  
Mechanical And Electrical Properties ◽  
Electroplated Copper

Both mechanical and electrical properties of electroplated copper thin films were investigated experimentally with respect to changes in their micro texture. Clear recrystallization was observed after the annealing even at low temperature of about 150°C. The fracture strain of the film annealed at 400°C increased from the initial value of about 3% to 15%, and at the same time, the yield stress of the annealed film decreased from about 270 MPa to 90 MPa. In addition, it was found that there were two fatigue fracture modes in the film annealed at the temperatures lower than 200°C. One was a typical ductile fracture mode with plastic deformation and the other was brittle one. When the brittle fracture occurred, the crack propagated along weak or porous grain boundaries which remained in the film after electroplating. The brittle fracture mode disappeared after the annealing at 400°C. These results clearly indicated that the mechanical properties of electroplated copper thin films vary drastically depending on their micro texture. Next, the electrical reliability of electroplated copper thin film interconnections was discussed. The interconnections used for electromigration (EM) tests were made by damascene process. The width of the interconnections was varied from 1 μm to 10 μm. An abrupt fracture mode due to local fusion appeared in the as-electroplated films within a few hours during the test. Since the fracture rate increased linearly with the increase of square of the applied current density, this fracture mode was dominated by local Joule heating. It seemed that the local resistance of the film increased due to the porous grain boundaries and thus, the local temperature around the porous grain boundaries increased drastically. On the other hand, the life of the interconnections annealed at 400°C was improved significantly. This was because of the increase of the average grain size and the improvement of the quality of grain boundaries in the annealed films. The electrical properties of the electroplated copper films were also dominated by their micro texture. However, the stress migration occurred in the interconnections after the annealing at 400°C. This was because of the high residual tensile stress caused by the constraint of the densification of the films by the surrounding oxide film in the interconnection structures during the annealing. Finally, electroplating condition was controlled to improve the electrical properties. Both the resistance of electromigration and electrical resistivity were improved significantly. However, electromigration of copper atoms still occurred at the interface between the electroplated copper and the thin tantalum (Ta) layer sputtered as base material. Therefore, it is very important to control the crystallographic quality of electroplated copper films and the interface between different materials for improving the reliability of thin film interconnections.

scholarly journals Processing and Analysis of Long-Range Scans with an Atomic Force Microscope (AFM) in Combination with Nanopositioning and Nanomeasuring Technology for Defect Detection and Quality Control

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5862
Author(s):  
Ingo Ortlepp ◽  
Jaqueline Stauffenberg ◽  
Eberhard Manske
Keyword(s):  
Quality Control ◽  
High Resolution ◽  
Atomic Force Microscope ◽  
Range Of Motion ◽  
Defect Detection ◽  
Large Range ◽  
The Other ◽  
Atomic Force ◽  
Measuring Machine ◽  
The One

This paper deals with a planar nanopositioning and -measuring machine, the so-called nanofabrication machine (NFM-100), in combination with a mounted atomic force microscope (AFM). This planar machine has a circular moving range of 100 mm. Due to the possibility of detecting structures in the nanometre range with an atomic force microscope and the large range of motion of the NFM-100, structures can be analysed with high resolution and precision over large areas by combining the two systems, which was not possible before. On the basis of a grating sample, line scans over lengths in the millimetre range are demonstrated on the one hand; on the other hand, the accuracy as well as various evaluation methods are discussed and analysed.

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