Tunable p-type doping of Si nanostructures for near infrared light photodetector application

A near infrared light nano-heterojunction photodetector was fabricated by combining graphene and boron doped p-type silicon nanowires, which were synthesized by a co-thermal evaporation method.

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Controlling the Size of Interior Core of Silicon Nanowires

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.45.193 ◽

2017 ◽

Vol 45 ◽

pp. 193-198 ◽

Cited By ~ 2

Author(s):

Ankur Soam ◽

Rajiv Dusane

Keyword(s):

Electrical Properties ◽

Silicon Nanowires ◽

Thermal Evaporation ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Vapor Liquid Solid ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Template Size

As the physical and electrical properties of silicon nanowires (SiNWs) are determined by their dimension, it is necessary to control their dimension to integrate them in a device. SiNWs were synthesized via Vapor-Liquid-Solid (VLS) mechanism in hot-wire chemical vapor process (HWCVP) technique using silane as a Si source and Sn as a catalyst. Different sizes of nano-template have been made by depositing of different amount of Sn using thermal evaporation method. The size of nano-template is found to be increased with the quantity of Sn. The diameter of resulted SiNWs depends on the size of the nano-template and it increases with the nano-template size. However, the diameter of SiNWs is found to be much larger than the used nano-template which is due to the deposition of silicon film on the sidewalls of the growing SiNWs. It is demonstrated here that the diameter of the interior core of SiNWs can be controlled desirable by adjusting the size of the nano-template.

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n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature

Applied Physics Letters ◽

10.1063/1.3250171 ◽

2009 ◽

Vol 95 (16) ◽

pp. 162102 ◽

Cited By ~ 35

Author(s):

Mahmoud Shaban ◽

Shota Izumi ◽

Keita Nomoto ◽

Tsuyoshi Yoshitake

Keyword(s):

Room Temperature ◽

Near Infrared ◽

Infrared Light ◽

Light Detection ◽

Near Infrared Light ◽

P Type

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Thermoelectric power for thermally deposited cadmium telluride films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v13i26.281 ◽

2019 ◽

Vol 13 (26) ◽

pp. 38-41

Author(s):

M. F. A. Alias

Keyword(s):

Thermoelectric Power ◽

Cadmium Telluride ◽

Thermal Evaporation ◽

Thermal Evaporation Method ◽

Evaporation Method ◽

Corning Glass ◽

Glass Slides ◽

Type Semiconductor ◽

Cdte Films ◽

P Type

Thermal evaporation method has used for depositing CdTe filmson corning glass slides under vacuum of about 10-5mbar. Thethicknesses of the prepared films are400 and 1000 nm. The preparedfilms annealed at 573 K. The structural of CdTe powder and preparedfilms investigated. The hopping and thermal energies of as depositedand annealed CdTe films studied as a function of thickness. Apolycrystalline structure observed for CdTe powder and preparedfilms. All prepared films are p-type semiconductor. The hoppingenergy decreased as thickness increased, while thermal energyincreased.

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