scholarly journals Correction: Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet

2015 ◽  
Vol 3 (1) ◽  
pp. 447-447 ◽  
Author(s):  
Chang Woo Kim ◽  
Young Seok Son ◽  
Amol Uttam Pawar ◽  
Myung Jong Kang ◽  
Jin You Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectrochemical Properties ◽  
Nio Thin Film ◽  
Facile Fabrication

Correction for ‘Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet’ by Chang Woo Kim et al., J. Mater. Chem. A, 2014, 2, 19867–19872.

Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet

2014 ◽  
Vol 2 (46) ◽  
pp. 19867-19872 ◽  
Author(s):  
Chang Woo Kim ◽  
Young Seok Son ◽  
Amol Uttam Pawar ◽  
Myoung Jong Kang ◽  
Jin You Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectrochemical Properties ◽  
Monolayer Film ◽  
Ito Glass ◽  
Nio Thin Film ◽  
Facile Fabrication ◽  
P Type

A one axis-oriented p-type NiO monolayer film with a (111) dominant facet on ITO glass was fabricated for use as a photocathodic electrode.

Cu doped NiO thin film photocathodes for enhanced PEC performance

2021 ◽  
pp. 107050
Author(s):  
Pooja Sahoo ◽  
Akash Sharma ◽  
Subash Padhan ◽  
R. Thangavel
Keyword(s):  
Thin Film ◽  
Nio Thin Film

Facile fabrication of Cu2ZnSnS4 thin film based on a novel metal–salt precursor printing route

2015 ◽  
Vol 143 ◽  
pp. 185-187 ◽  
Author(s):  
Jin Chen ◽  
Qinmiao Chen ◽  
Yi Ni ◽  
Tingting Wang ◽  
Zhen Jia ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Salt ◽  
Facile Fabrication ◽  
Cu2znsns4 Thin Film

scholarly journals Effects of Growth Temperature on the Physicochemical and Photoelectrochemical Properties of a Modified Chemical Bath Deposited Fe2O3 Photoelectrode

2020 ◽  
Vol 58 (4) ◽  
pp. 263-271
Author(s):  
Yaejin Hong ◽  
Seung-Hwan Jeon ◽  
Hyukhyun Ryu ◽  
Won-Jae Lee
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Growth Temperature ◽  
Electrochemical Impedance ◽  
Ph Value ◽  
Saturated Calomel Electrode ◽  
Precursor Solution ◽  
Photocurrent Density ◽  
Flat Band ◽  
Photoelectrochemical Properties

In this study, Fe2O3 photoelectrode thin films were grown on fluorine-doped tin oxide substrates at various temperatures ranging from 145 to 220 oC using modified chemical bath deposition. The morphological, structural, electrical, and photoelectrochemical properties of the resulting Fe2O3 photoelectrode were analyzed using field emission scanning electron microscopy, X-ray diffraction, electrochemical impedance spectroscopy, and a three-electrode potentiostat/galvanostat, respectively. Growth temperature and hydrochloric acid etching both affected the growth of the Fe2O3 photoelectrode, with Fe2O3 thin film thickness first increasing and then decreasing as growth temperature increased. The pH value of the precursor solution varied according to growth temperature, which in turn affected film thickness. The highest photocurrent density (0.53 mA/cm2 at 0.5 V vs. saturated calomel electrode) was obtained from the Fe2O3 photoelectrode grown at 190 oC, which yielded the thickest thin film, smallest full width at half maximum and largest grain size for the (104) and (110) plane, and highest flat-band potential value. Based on these findings, the photoelectrochemical properties of Fe2O3 photoelectrodes grown at various temperatures are strongly affected by their morphological, structural, and electrical properties.

A New Buffering Layer of Photovoltaic Solar Cells

2012 ◽  
Vol 482-484 ◽  
pp. 394-397
Author(s):  
Ming Wei Li ◽  
Nan Hai Sun ◽  
Yun Wang Ge ◽  
Bo Lei Yao
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Room Temperature ◽  
Acid Methyl Ester ◽  
Good Alternative ◽  
Oxide Thin Film ◽  
Nio Thin Film ◽  
Temperature Deposition ◽  
Photovoltaic Solar Cells

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

scholarly journals Effect of HF Treatment on the Photoelectrochemical Properties of a Hematite Thin Film Photoanode for Water Splitting

2014 ◽  
Vol 30 (6) ◽  
pp. 1099-1106 ◽  
Author(s):  
HU Yu-Xiang ◽  
◽  
JIANG Chun-Xiang ◽  
FANG Liang ◽  
ZHENG Fen-Gang ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Splitting ◽  
Photoelectrochemical Properties

Improved electrochromic performance of a radio frequency magnetron sputtered NiO thin film with high optical switching speed

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
Author(s):  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Optical Switching ◽  
Switching Time ◽  
Rf Magnetron Sputtering ◽  
Optical Modulation ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Nio Thin Film

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

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