scholarly journals Optical performance improvement of semi-transparent metal film electrodes with biomimetic subwavelength gratings for high-performance optoelectronic device applications

RSC Advances ◽  
2015 ◽  
Vol 5 (103) ◽  
pp. 84865-84871 ◽  
Author(s):  
Minkyu Choi ◽  
Jung Woo Leem ◽  
Jae Su Yu
Keyword(s):  
Polymer Film ◽  
Performance Improvement ◽  
Polyethylene Terephthalate ◽  
Metal Film ◽  
High Performance ◽  
Optoelectronic Device ◽  
Optical Performance ◽  
Metal Electrodes ◽  
Subwavelength Gratings ◽  
Device Applications

Semi-transparent metal electrodes consisting of silver-coated subwavelength gratings on polymer film/polyethylene terephthalate substrates for high-performance optoelectronic device applications.

Gold nanoparticle–ultrananocrystalline diamond hybrid structured materials for high-performance optoelectronic device applications

Nanoscale ◽  
2015 ◽  
Vol 7 (10) ◽  
pp. 4377-4385 ◽  
Author(s):  
Kamatchi Jothiramalingam Sankaran ◽  
Srinivasu Kunuku ◽  
Balakrishnan Sundaravel ◽  
Ping-Yen Hsieh ◽  
Huang-Chin Chen ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Gold Nanoparticle ◽  
Field Emission ◽  
High Performance ◽  
Optoelectronic Device ◽  
Au Nps ◽  
Structured Materials ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond ◽  
Device Applications

Au-NPs hybridized in ultrananocrystalline diamond materials markedly enhance their electrical conductivity and field emission properties.

Thermal-tolerant polymers with antireflective and hydrophobic grooved subwavelength grating surfaces for high-performance optics

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79755-79762 ◽  
Author(s):  
Jung Woo Leem ◽  
Bhaskar Dudem ◽  
Jae Su Yu
Keyword(s):  
High Performance ◽  
Optical Performance ◽  
Subwavelength Grating ◽  
Thermal Durability ◽  
Subwavelength Gratings

Polymers with grooved subwavelength gratings enhance the optical performance in broad wavelengths and angles, having good thermal durability and hydrophobicity.

Breakdown Behavior of Aigan Msm uv Photodetectors

1997 ◽  
Vol 482 ◽  
Author(s):  
S. Liang ◽  
Y. Liu ◽  
Y. Lu ◽  
M. Schurman ◽  
C. A. Tran ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Negative Temperature ◽  
Optoelectronic Device ◽  
Wide Bandgap ◽  
Metal Electrodes ◽  
Uv Photodetectors ◽  
Device Applications ◽  
Dc Bias ◽  
The Relationship ◽  
Mocvd Technique

AbstractGaN is an attractive wide bandgap semiconductor material for optoelectronic device applications at blue and UV wavelengths. The breakdown behavior of interdigital MSM type of AlGaN UV photodetectors (PDs) are reported here. The A1GaN was deposited using MOCVD technique. The MSM devices were fabricated using undoped AlGaN (Al composition is 0.13) epitaxial layer on sapphire substrate. Au/Ti metallization was patterned as metal electrodes on AlGaN. Very high UV responsivity of the devices was achieved at DC bias voltage in the range of 60–140V depending on the device dimensions. The breakdown voltage exhibits a negative temperature coefficient. The relationship between the breakdown voltage and device dimensions has been investigated using both of I-V, C-V characteristics. It has been found that annealing of the contact modifies the device characteristics, in particular, the breakdown behaviors.

High performance self-powered photodetection with a low detection limit based on a two-dimensional organometallic perovskite ferroelectric

2021 ◽  
Author(s):  
Yu Ma ◽  
Jiaqi Wang ◽  
Yi Liu ◽  
Shiguo Han ◽  
Yaobin Li ◽  
...  
Keyword(s):  
Detection Limit ◽  
High Performance ◽  
Optoelectronic Device ◽  
Two Dimensional ◽  
Low Detection Limit ◽  
Hybrid Perovskite ◽  
Device Applications ◽  
Self Powered ◽  
2D Hybrid Perovskite

Self-powered photodetection with an extremely low detection limit of 82 nW cm−2 is achieved in a 2D hybrid perovskite ferroelectric. This result sheds light on future advances of ferroelectrics toward smart optoelectronic device applications.

Linear and nonlinear optical characteristics of all-inorganic perovskite CsPbBr3 quantum dots modified by hydrophobic zeolites

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22766-22774 ◽  
Author(s):  
Ruxue Li ◽  
Zhipeng Wei ◽  
Haixia Zhao ◽  
Hongrui Yu ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Nonlinear Optical ◽  
Optoelectronic Device ◽  
Optical Characteristics ◽  
Inorganic Perovskite ◽  
Perovskite Quantum Dots ◽  
Device Applications ◽  
Linear And Nonlinear ◽  
Cspbbr3 Quantum Dots

All-inorganic perovskite quantum dots (QDs) have been considered as outstanding candidates for high-performance optoelectronic device applications.

scholarly journals FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 11
Author(s):  
Wangqiong Xu ◽  
Ying Lu ◽  
Weibin Lei ◽  
Fengrui Sui ◽  
Ruru Ma ◽  
...  
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Optoelectronic Device ◽  
Great Promise ◽  
Photoelectrical Properties ◽  
Device Applications ◽  
The Individual

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Sign in / Sign up

Export Citation Format

Share Document