Size-dependent crystalline fluctuation and growth mechanism of bismuth nanoparticles under electron beam irradiation

Nanoscale ◽  
2016 ◽  
Vol 8 (24) ◽  
pp. 12282-12288 ◽  
Author(s):  
Sujuan Wu ◽  
Yi Jiang ◽  
Lijun Hu ◽  
Jianguo Sun ◽  
Piaopiao Wan ◽  
...  
Keyword(s):  
Electron Beam ◽  
Growth Mechanism ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Size Dependent ◽  
Bismuth Nanoparticles

Growth Mechanism and Morphology Control of Porous Hexagonal Plates of Hydrohausmannite Prepared by Hydrothermal Method

2014 ◽  
Vol 513-517 ◽  
pp. 277-280
Author(s):  
De Yan ◽  
Yan Hong Li ◽  
Ying Liu ◽  
Ren Fu Zhuo ◽  
Zhi Guo Wu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Hydrothermal Method ◽  
Growth Mechanism ◽  
Electron Beam Irradiation ◽  
Morphology Control ◽  
Beam Irradiation ◽  
Selected Area Electron Diffraction ◽  
Experimental Parameters ◽  
Oriented Aggregation

Porous hexagonal plates of hydrohausmannite were prepared by a simple hydrothermal method. Morphology control of the product was easily achieved by adjusting the experimental parameters. The selected area electron diffraction (SAED) patterns show obvious evidence that these hexagonal plates were formed by oriented aggregation-based growth of subunits, which is discussed in details. Intriguing well-shaped hexagonal pores were obtained when the hexagonal plates were exposed to high intensity electron beam irradiation. These hexagonal plates of manganese oxide may have wide applications as components and/or interconnect in nanodevices and/or as nanotools.

Controlled growth of bismuth nanoparticles by electron beam irradiation in TEM

2007 ◽  
Vol 427 (1-2) ◽  
pp. 330-332 ◽  
Author(s):  
Seon Ho Kim ◽  
Young-Suk Choi ◽  
Kyongha Kang ◽  
Sung Ik Yang
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Controlled Growth ◽  
Beam Irradiation ◽  
Bismuth Nanoparticles

In situformation of bismuth nanoparticles through electron-beam irradiation in a transmission electron microscope

2007 ◽  
Vol 18 (33) ◽  
pp. 335604 ◽  
Author(s):  
S Sepulveda-Guzman ◽  
N Elizondo-Villarreal ◽  
D Ferrer ◽  
A Torres-Castro ◽  
X Gao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Bismuth Nanoparticles ◽  
Transmission Electron

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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