Growth of an 8-hydroxyquinoline single crystal by a modified Czochralski growth technique, and crystal characterization

CrystEngComm ◽  
2018 ◽  
Vol 20 (5) ◽  
pp. 624-630 ◽  
Author(s):  
Sonu Kumar ◽  
Binay Kumar
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Organic Compounds ◽  
Hirshfeld Surface ◽  
Czochralski Growth ◽  
Growth Technique ◽  
Fingerprint Plots ◽  
Set Up ◽  
Crystal Characterization

Piezoelectric 8-hydroxyqunoline crystal was grown by modified Czochralski set-up, designed for low melting point organic compounds. Hirshfeld surface and fingerprint plots were generated.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

Growth technique of optical quality large-size single-crystal sapphire

2015 ◽  
Vol 32 (4) ◽  
pp. 350
Author(s):  
Dongyang Wang ◽  
Wei He ◽  
Ling Li ◽  
Jianpang Zhai
Keyword(s):  
Single Crystal ◽  
Optical Quality ◽  
Growth Technique ◽  
Large Size ◽  
Single Crystal Sapphire

scholarly journals Growth of single crystals in the (Na1/2Bi1/2)TiO3–(Sr1–xCax)TiO3 system by solid state crystal growth

2021 ◽  
Author(s):  
Phan Gia Le ◽  
Huyen Tran Tran ◽  
Jong-Sook Lee ◽  
John G. Fisher ◽  
Hwang-Pill Kim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Piezoelectric Properties ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Large Strains ◽  
Growth Technique ◽  
The Matrix

AbstractCeramics based on (Na1/2B1/2)TiO3 are promising candidates for actuator applications because of large strains generated by an electric field-induced phase transition. For example, the (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 system exhibits a morphotropic phase boundary at x = 0.2–0.3, leading to high values of inverse piezoelectric constant d*33, which can be further improved by the use of single crystals. In our previous work, single crystals of (Na1/2B1/2)TiO3-SrTiO3 and (Na1/2B1/2)TiO3-CaTiO3 were grown by the solid state crystal growth technique. Growth in the (Na1/2B1/2)TiO3-SrTiO3 system was sluggish whereas the (Na1/2B1/2)TiO3-CaTiO3 single crystals grew well. In the present work, 0.8(Na1/2Bi1/2)TiO3-0.2(Sr1−xCax)TiO3 single crystals (with x = 0.0, 0.1, 0.2, 0.3, 0.4) were produced by the solid state crystal growth technique in an attempt to improve crystal growth rate. The dependence of mean matrix grain size, single crystal growth distance, and electrical properties on the Ca concentration was investigated in detail. These investigations indicated that at x = 0.3 the matrix grain growth was suppressed and the driving force for single crystal growth was enhanced. Replacing Sr with Ca increased the shoulder temperature Ts and temperature of maximum relative permittivity Tmax, causing a decrease in inverse piezoelectric properties and a change from normal to incipient ferroelectric behavior.

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

Single-crystal rare-earth doped YAG fiber lasers grown by the laser-heated pedestal growth technique

2014 ◽  
Author(s):  
Craig D. Nie ◽  
James A. Harrington ◽  
Yuan Li ◽  
Eric G. Johnson ◽  
Elizabeth F. Cloos ◽  
...  
Keyword(s):  
Rare Earth ◽  
Single Crystal ◽  
Fiber Lasers ◽  
Growth Technique ◽  
Laser Heated ◽  
Rare Earth Doped
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