Interfacially Al-doped ZnO nanowires: greatly enhanced near band edge emission through suppressed electron–phonon coupling and confined optical field
2017 ◽
Vol 19
(14)
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pp. 9537-9544
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Via an interfacial Al-doping strategy, the near band edge emission of ZnO NWs can be greatly enhanced by over 20-fold.
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2020 ◽
Vol 38
(1)
◽
pp. 012210
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2019 ◽
Vol 30
(23)
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pp. 20544-20550
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2019 ◽
Vol 210
◽
pp. 363-370
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2017 ◽
Vol 705
◽
pp. 492-496
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2019 ◽
Vol 205
◽
pp. 337-341
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