Modification of near band edge emission and structure with Ga-related clusters in Ga-doped ZnO nanocrystal films

Author(s):  
Tetyana V. Torchynska ◽  
Brahim El Filali ◽  
Chetzyl I. Ballardo Rodriguez ◽  
Georgiy Polupan ◽  
Lyudmula Shcherbyna
2019 ◽  
Vol 89 ◽  
pp. 322-328 ◽  
Author(s):  
B. El Filali ◽  
J.A. Jaramillo Gomez ◽  
T.V. Torchynska ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna

2007 ◽  
Vol 90 (8) ◽  
pp. 083113 ◽  
Author(s):  
Congkang Xu ◽  
Junghwan Chun ◽  
Dong Eon Kim ◽  
Ju-Jin Kim ◽  
Bonghwan Chon ◽  
...  

2004 ◽  
Vol 95 (9) ◽  
pp. 4772-4776 ◽  
Author(s):  
F. K. Shan ◽  
B. I. Kim ◽  
G. X. Liu ◽  
Z. F. Liu ◽  
J. Y. Sohn ◽  
...  

2019 ◽  
Vol 92 ◽  
pp. 11-15 ◽  
Author(s):  
Xinhua Pan ◽  
Xiangyang Chen ◽  
Chenxiao Xu ◽  
Shanshan Chen ◽  
Yujia Zeng ◽  
...  

2017 ◽  
Vol 19 (14) ◽  
pp. 9537-9544 ◽  
Author(s):  
Yiming Wu ◽  
Yanmeng Dai ◽  
Shenlong Jiang ◽  
Chao Ma ◽  
Yue Lin ◽  
...  

Via an interfacial Al-doping strategy, the near band edge emission of ZnO NWs can be greatly enhanced by over 20-fold.


2010 ◽  
Vol 21 (6) ◽  
pp. 065709 ◽  
Author(s):  
A Dev ◽  
R Niepelt ◽  
J P Richters ◽  
C Ronning ◽  
T Voss

Sign in / Sign up

Export Citation Format

Share Document