A type-II GeSe/SnS heterobilayer with a suitable direct gap, superior optical absorption and broad spectrum for photovoltaic applications

2017 ◽  
Vol 5 (26) ◽  
pp. 13400-13410 ◽  
Author(s):  
Congxin Xia ◽  
Juan Du ◽  
Wenqi Xiong ◽  
Yu Jia ◽  
Zhongming Wei ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Broad Spectrum ◽  
Band Alignment ◽  
Promising Material ◽  
Type Ii ◽  
Photovoltaic Applications ◽  
P Type

Type-II band alignment, a suitable direct gap (1.519 eV), superior optical-absorption (∼105) and a broad spectrum make the GeSe/SnS heterobilayer a promising material for photovoltaic applications.

A type-II C2N/α-Te van der Waals heterojunction with improved optical properties by external perturbation

2019 ◽  
Vol 21 (39) ◽  
pp. 21753-21760 ◽  
Author(s):  
Zhuang Ma ◽  
Yusheng Wang ◽  
Yuting Wei ◽  
Chong Li ◽  
Xiuwen Zhang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Broad Spectrum ◽  
Near Infrared ◽  
External Perturbation ◽  
Band Alignment ◽  
Type Ii ◽  
Unique Type ◽  
Spectrum Width ◽  
Tunable Band Gap

The C2N/α-Te vdW heterojunction possessed a unique type-II band alignment, tunable band gap, improved optical absorption strength, and broad spectrum width (ultraviolet to near-infrared).

Ion Implantation of Boron in Diamond

1988 ◽  
Vol 128 ◽  
Author(s):  
G. S. Sandhu ◽  
M. L. Swanson ◽  
W. K. Chu
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Natural Diamond ◽  
Liquid Nitrogen Temperature ◽  
Type Ii ◽  
Electrical Measurements ◽  
Boron Ions ◽  
Dopant Atoms ◽  
P Type ◽  
Diamond Type

ABSTRACTIt has been a challenge to inject dopant atoms onto diamond lattice sites by ion implantation, because of the complications of ion damage and defect clustering during annealing. We re-investigated this topic by implanting boron ions into an insulating natural diamond ( type II-A ) which was predamaged by carbon ion implantation. Both of the implantations were performed at liquid nitrogen temperature. The amount of pre-damage was adjusted to produce enough vacancies and interstitials in diamond to promote boron substitutionality during subsequent annealing. Samples were characterized by optical absorption and electrical measurements. It was found that optical absorption of the implanted samples strongly depends on the post implant annealing sequence. The activation energies obtained from electrical measurements match very closely to those due to boron atoms in natural p-type diamonds. Photoconductivity measurements showed that the fraction of remaining electrically active radiation defects in the implanted and annealed samples depends on the relative fluences of boron and carbon.

Ag2S–AgInS2: p–n junction heteronanostructures with quasi type-II band alignment

2014 ◽  
Vol 50 (23) ◽  
pp. 3074-3077 ◽  
Author(s):  
Riya Bose ◽  
Goutam Manna ◽  
Santanu Jana ◽  
Narayan Pradhan
Keyword(s):  
Charge Separation ◽  
Band Alignment ◽  
Type Ii ◽  
Junction Diode ◽  
P Type

A single nanostructure p–n junction diode has been fabricated colloidally by synthesizing a heterostructure comprising of p-type Ag2S and n-type AgInS2, where the quasi type-II band alignment of the constituents further improve charge separation.

Interface effect on electronic and optical properties of antimonene/GaAs van der Waals heterostructures

2017 ◽  
Vol 5 (37) ◽  
pp. 9687-9693 ◽  
Author(s):  
Ning Wang ◽  
Dan Cao ◽  
Jun Wang ◽  
Pei Liang ◽  
Xiaoshuang Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Van Der Waals ◽  
Band Alignment ◽  
Optical Absorption Coefficient ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Visible Light Range ◽  
High Optical Absorption ◽  
High Optical Absorption Coefficient

Antimonene/GaAs van der Waals heterostructures exhibit a type-II band alignment and a high optical absorption coefficient in the visible-light range.

Gangrena de Fournier. Reporte de caso

2020 ◽  
Vol 63 (5) ◽  
pp. 26-30
Author(s):  
Paloma Pérez Ladrón de Guevara ◽  
Georgina Cornelio Rodríguez ◽  
Oscar Quiroz Castro
Keyword(s):  
Mortality Rate ◽  
Necrotizing Fasciitis ◽  
Broad Spectrum ◽  
Soft Tissues ◽  
Fournier’S Gangrene ◽  
Type Ii ◽  
Necrotic Tissue ◽  
Fournier's Gangrene ◽  
Necrotizing Fascitis ◽  
Key Words Fournier's Gangrene

Fournier’s Gangrene is a type II necrotizing fascitis that leads to thrombosis of small subcutaneous vessels and spreads through the perianal and genital regions and the skin of the perineal. Most cases have a perianal or colorectal focus and in a smaller proportion it originates from the urogenital tract. The mortality rate varies between 7.8 and 50%1-3, only timely diagnosis decreases the morbidity and mortality of this condition. Treatment includes surgical debridement of all necrotic tissue and the use of broad-spectrum antibiotics. Key words: Fournier’s gangrene; gangrene; necrotizing fasciitis; infectious necrotizing of soft tissues.

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Monolayer MoS2 Nanoribbons as a Promising Material for Both n-type and p-type Legs in Thermoelectric Generators

2016 ◽  
Vol 45 (10) ◽  
pp. 5253-5263 ◽  
Author(s):  
A. Arab ◽  
A. V. Davydov ◽  
D. A. Papaconstantopoulos ◽  
Q. Li
Keyword(s):  
Promising Material ◽  
Thermoelectric Generators ◽  
Monolayer Mos2 ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document