Tuning the catalytic functionality of transition metal dichalcogenides grown by chemical vapour deposition

2017 ◽  
Vol 5 (29) ◽  
pp. 14950-14968 ◽  
Author(s):  
Gi Woong Shim ◽  
Woonggi Hong ◽  
Sang Yoon Yang ◽  
Sung-Yool Choi

This review provides insights for the design of synthetic schemes and catalytic systems of CVD-grown functional TMDs for high performance HER applications.

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7590
Author(s):  
Luca Seravalli ◽  
Matteo Bosi

Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.


Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.


2022 ◽  
Author(s):  
Sadia Khalid ◽  
Ejaz Ahmed ◽  
M. Azad Malik ◽  
David J. Lewis ◽  
Shahzad Abu Bakar ◽  
...  

Correction for ‘Synthesis of pyrite thin films and transition metal doped pyrite thin films by aerosol-assisted chemical vapour deposition’ by Sadia Khalid et al., New J. Chem., 2015, 39, 1013–1021, DOI: 10.1039/C4NJ01461H.


Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7317-7323 ◽  
Author(s):  
Hamid Reza Rasouli ◽  
Naveed Mehmood ◽  
Onur Çakıroğlu ◽  
T. Serkan Kasırga

A custom-made chemical vapour deposition chamber is used to observe and control the synthesis of nanoscale materials in real time.


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