Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD

CrystEngComm ◽  
2018 ◽  
Vol 20 (36) ◽  
pp. 5395-5401
Author(s):  
Wei Zhao ◽  
Linan He ◽  
Xianjin Feng ◽  
Caina Luan ◽  
Jin Ma
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Electrical And Optical Properties ◽  
Titania Films ◽  
Doped Titania

Epitaxial Ta-doped TiO2 films deposited via MOCVD were found to exhibit much improved electrical properties compared to the intrinsic TiO2.

The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation

2007 ◽  
Vol 131-133 ◽  
pp. 225-232 ◽  
Author(s):  
R. Jones
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Electrical Activity ◽  
Theoretical Work ◽  
Precipitation Process ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Electrical And Optical Properties ◽  
Oxygen Precipitation ◽  
Oxygen Atoms

Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.

Electrical Properties and Microstructures of Ultraviolet Transparent Ga2O3 Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1233-1236
Author(s):  
Yasuhiro Shigetoshi ◽  
Susumu Tsukimoto ◽  
Hidehisa Takeda ◽  
Kazuhiro Ito ◽  
Masanori Murakami
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Partial Pressure Of Oxygen ◽  
Electrical And Optical Properties ◽  
Sputtering Deposition

The electrical and optical properties, and microstructures of 100 nm-thick Ga2O3 films fabricated on Al2O3(0001) substrates by a sputtering deposition were investigated. The partial pressure of oxygen was controlled and the substrate temperature was kept to be 500 °C during deposition. With increasing the oxygen partial pressure, the structures of the Ga2O3 films deposited on the substrates were observed to change from amorphous to crystalline (monoclinic β-type Ga2O3). The transmittance of the Ga2O3 films was measured to be more than 80 % at the visible and ultraviolet regions although the electrical resistivity was high. In order to obtain both low electrical resistivity and high transmittance at the ultraviolet regions, the addition of active dopant elements such as Sn into the Ga2O3 films would be required.

scholarly journals Optical Properties of Titania-Cobalt Nitrate Composite Thin Films

1996 ◽  
Vol 5 (6) ◽  
pp. 096369359600500
Author(s):  
F. Pacheco ◽  
R. Palomino ◽  
G. Martínez ◽  
A. Mendoza-Galván ◽  
R. Rodriguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Cobalt Nitrate ◽  
Experimental Conditions ◽  
Ellipsometric Characterization ◽  
Titania Films ◽  
Doped Titania ◽  
Thin Film Composites ◽  
Film Composites

Optical properties of titania thin films supported on silica plates and compounded with varying amounts of Co(II) from cobalt nitrate are reported. The ellipsometric characterization allows to model the spatial micro-structure of these thin film composites. The titania films were produced by the sol-gel method at room temperature and their thicknesses can be controlled by modifying the experimental conditions. The refractive index of the doped titania films was also determined by using ellipsometry.

Preparation and Study the Electrical and Optical Properties for (PVA-PEG-Sr2O3) Nanocomposites

2021 ◽  
Vol 19 (10) ◽  
pp. 47-55
Author(s):  
Safa Ahmed Jabbar Al-Rubaye ◽  
Nassar A. Al-lsawi ◽  
Ali R. Abdulridha
Keyword(s):  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Energy Gap ◽  
Antimony Oxide ◽  
Optical And Electrical Properties ◽  
Electrical And Optical Properties ◽  
Constant E

In the presented work, the optical and electrical properties of composite materials (PVA-PEG-Sr2O3) were measured, as the electrical properties were verified at various frequencies in range of 100 Hz-6 MHz. In addition, the experimental results showed that the increase in frequency causes a reduction in the dielectric loss (δ) and dielectric constant (ɛ), and there is an increase in ɛ due to the increase in the content of antimony oxide (Sr2O3). It increases with increasing frequency and decreases with increasing Sr2O3 content in PVA-PEG-Sr2O3 compounds, the result of the optical properties of the nanoparticles (PVA-PEG-Sr2O3) showed that the values transmittance and energy gap were reduced with the increases in the concentrations of Sr2O3 NPs, whereas the values related to extinction coefficient, absorption coefficient, optical conductivity, refractive index, and dielectric constant (imaginary, real) were increased with increase in the concentration of Sr2O3 NPs.

Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Sputtering ◽  
Processing Parameters ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

Investigation Of Deep Energy Levels In II-VI Compounds

1996 ◽  
Vol 442 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
P. Fernandez ◽  
B. Fraboni ◽  
J. Piqueras
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Energy Levels ◽  
Deep Levels ◽  
Compensation Mechanism ◽  
Electrical And Optical Properties ◽  
Compensation Process ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractDeep levels in II-VI compounds have been investigated to understand their role in the compensation mechanism and their influence on the material electrical and optical properties. The electrical properties have been studied by current and capacitance transient spectroscopy, while the optical properties have been studied by cathodoluminescence. We have focused our attention on the traps involved in the compensation process, such as centre A and the deep levels located near midgap.

Electrical and Optical Properties of Indium Tin Zirconium Oxide Films at Different Annealing Treatment Temperatures

2012 ◽  
Vol 189 ◽  
pp. 110-114
Author(s):  
Jian Guo Chai ◽  
Bo Zhang
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Zirconium Oxide ◽  
Room Temperature ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Lower Annealing Temperature

Indium tin oxide (ITO) and indium tin zirconium oxide (ITZO) films were deposited on glass substrates at room temperature by magnetron sputtering technology with one or two targets. Electrical and optical properties of ITO and ITZO films by air-annealing treatment were contrastively studied. ITZO films provided with the preferential crystalline orientation change from (222) to (400) plane, as well as the increase in grain size and the decrease in surface roughness. As result, zirconium -doping remarkably improved the optical-electrical properties of the films deposited at room temperature. The resistivity of ITO and ITZO films showed the trend which includes first dropping and then rising, which was closely related with the variations of carrier concentration and mobility. ITZO films had high optical transmittance of above 80% at lower annealing temperature. ITZO films prepared by co-sputtering reveal better optical-electrical properties.

scholarly journals Enhanced Optical and Electrical Properties of ITO/Ag/AZO Transparent Conductors for Photoelectric Applications

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Gyeong-Nam Lee ◽  
Ponnamma Machaiah M. ◽  
Wang-Hee Park ◽  
Joondong Kim
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Transparent Conductors ◽  
Optical And Electrical Properties ◽  
Rectification Ratio ◽  
Si Substrate ◽  
Electrical And Optical Properties

The enhancement of the optical and electrical properties of TCO films was investigated by depositing different layers of AZO (100 nm), Ag (5 nm)/AZO (95 nm), and ITO (45 nm)/Ag (5 nm)/AZO (50 nm) upon n-Si substrate at room temperature by magnetron sputtering method. The ITO/Ag/AZO device efficiently improved the electrical and optical properties with the low sheet resistance of 2.847 Ω/sq. and an increase in the rectification ratio of 455.60% when compared with AZO and Ag/AZO devices. The combination of ITO/Ag/AZO provided the optimum results in all the electrical and optical properties. These results showed that within the optimized thickness range of 100 nm, compared to AZO and Ag/AZO, ITO/Ag/AZO device showed the improvement for both optical and electrical properties at room temperature.

Material-Process Interactions in the Annealing of Gallium Arsenide

1981 ◽  
Vol 4 ◽  
Author(s):  
C. Lawrence Anderson
Keyword(s):  
Gallium Arsenide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Electron Beams ◽  
Pulsed Laser ◽  
Review Article ◽  
Electrical And Optical Properties ◽  
Physical Mechanisms ◽  
Material Process ◽  
Thermal Techniques

ABSTRACTThis review article provides an overview of the current understanding of the physical mechanisms involved in the annealing of ion implanted GaAs by thermal techniques and by CW and pulsed laser and electron beams. The successfulness of these techniques is evaluated in terms of the electrical and optical properties of the annealed layers. Promising areas of investigation for the improvement of the electrical properties of n-type layers produced by pulsed annealing are identified.

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