Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T′-MoTe2 films

Nanoscale ◽  
2018 ◽  
Vol 10 (42) ◽  
pp. 19906-19915 ◽  
Author(s):  
Li Yang ◽  
Hao Wu ◽  
Wenfeng Zhang ◽  
Zhenhua Chen ◽  
Jie Li ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electrical Transport ◽  
Transition Metal Dichalcogenides ◽  
Surface Chemical ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Metal Dichalcogenides ◽  
First Time ◽  
Anomalous Oxidation

The instability concern for molybdenum- and tungsten-based transition-metal dichalcogenides (TMDCs) was clarified by anomalous oxidation dynamics and impact on electrical transport properties for the first time.

Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

2019 ◽  
Vol 21 (21) ◽  
pp. 11359-11366 ◽  
Author(s):  
Armando Pezo ◽  
Matheus P. Lima ◽  
Marcio Costa ◽  
Adalberto Fazzio
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenides ◽  
Edge States ◽  
Electronic Transport Properties ◽  
Metal Dichalcogenides

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

Direct synthesis of ultra-thin large area transition metal dichalcogenides and their heterostructures on stretchable polymer surfaces

2016 ◽  
Vol 31 (7) ◽  
pp. 967-974 ◽  
Author(s):  
Michael E. McConney ◽  
Nicholas R. Glavin ◽  
Abigail T. Juhl ◽  
Michael H. Check ◽  
Michael F. Durstock ◽  
...  
Keyword(s):  
Transition Metal ◽  
Direct Synthesis ◽  
Transition Metal Dichalcogenides ◽  
Polymer Surfaces ◽  
Large Area ◽  
Metal Dichalcogenides ◽  
Image Position

Abstract

Vertical charge transport through transition metal dichalcogenides – a quantitative analysis

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19108-19113 ◽  
Author(s):  
Yuqi Zhu ◽  
Ruiping Zhou ◽  
Feng Zhang ◽  
Joerg Appenzeller
Keyword(s):  
Quantitative Analysis ◽  
Transition Metal ◽  
Charge Transport ◽  
Effective Mass ◽  
Transition Metal Dichalcogenides ◽  
Vertical Direction ◽  
Metal Dichalcogenides ◽  
First Time

Effective mass in the vertical direction of MoS2 and WSe2 has been extracted for the first time.

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

Electron transport properties of thermoelectrics based on layered substituted transition metal dichalcogenides

2017 ◽  
Vol 58 (5) ◽  
pp. 893-900 ◽  
Author(s):  
A. I. Romanenko ◽  
G. E. Yakovleva ◽  
V. E. Fedorov ◽  
A. Yu. Ledneva ◽  
V. A. Kuznetsov ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transition Metal ◽  
Transport Properties ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Electron Transport Properties

Patterned films from exfoliated two-dimensional transition metal dichalcogenides assembled at a liquid–liquid interface

2017 ◽  
Vol 5 (28) ◽  
pp. 6937-6944 ◽  
Author(s):  
R. M. Clark ◽  
K. J. Berean ◽  
B. J. Carey ◽  
N. Pillai ◽  
T. Daeneke ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Liquid Interface ◽  
Two Dimensional ◽  
Large Area ◽  
Metal Dichalcogenides ◽  
Patterned Films

We present a facile method for controlled and patterned deposition of large area films made of exfoliated transition metal dichalcogenides.

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