A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

2018 ◽  
Vol 6 (18) ◽  
pp. 4861-4865 ◽  
Author(s):  
Yuange Wang ◽  
Xiaowen Huang ◽  
Di Wu ◽  
Ranran Zhuo ◽  
Enping Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Near Infrared ◽  
Response Speed ◽  
Fast Response ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
High Responsivity ◽  
Specific Detectivity

High-performance room-temperature infrared photodetectors based on MoS2/CdTe p–n heterojunction with broadband response, high responsivity, specific detectivity as well as fast response speed were demonstrated.

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition

2016 ◽  
Vol 4 (11) ◽  
pp. 2111-2116 ◽  
Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Qi Zhang ◽  
Xing Xiong ◽  
Huiqiao Li ◽  
...  
Keyword(s):  
Decay Time ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetectors ◽  
Fast Decay ◽  
High Responsivity

High performance near-infrared photodetectors based on ultrathin SnS nanobelts grown via physical vapor deposition, showing a high responsivity of 300 A W−1 and a fast decay time of 7 ms.

High-performance self-powered deep ultraviolet photodetector based on MoS2/GaN p–n heterojunction

2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet ◽  
Deep Uv ◽  
Specific Detectivity ◽  
Self Powered

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.

scholarly journals Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

2015 ◽  
Vol 8 (1) ◽  
pp. 29-35 ◽  
Author(s):  
Huang Tan ◽  
Chao Fan ◽  
Liang Ma ◽  
Xuehong Zhang ◽  
Peng Fan ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Near Infrared ◽  
Infrared Photodetectors ◽  
Single Crystalline

A graphene/GaAs near-infrared photodetector enabled by interfacial passivation with fast response and high sensitivity

2015 ◽  
Vol 3 (18) ◽  
pp. 4723-4728 ◽  
Author(s):  
Lin-Bao Luo ◽  
Han Hu ◽  
Xian-He Wang ◽  
Rui Lu ◽  
Yi-Feng Zou ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Sensitivity ◽  
Response Speed ◽  
Fast Response ◽  
Device Performance ◽  
Infrared Photodetector

We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlOxpassivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.

A self-powered high-performance photodetector based on a MoS2/GaAs heterojunction with high polarization sensitivity

2019 ◽  
Vol 7 (13) ◽  
pp. 3817-3821 ◽  
Author(s):  
Cheng Jia ◽  
Di Wu ◽  
Enping Wu ◽  
Jiawen Guo ◽  
Zhihui Zhao ◽  
...  
Keyword(s):  
High Performance ◽  
Fast Response ◽  
Polarization Sensitivity ◽  
High Responsivity ◽  
High Polarization ◽  
Specific Detectivity ◽  
Self Powered

A high-performance self-powered photodetector based on a MoS2/GaAs heterojunction was demonstrated, which demonstrated a high responsivity, specific detectivity, fast response speeds, as well as high polarization sensitivity.

Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure

2021 ◽  
Vol 9 (10) ◽  
pp. 3504-3512
Author(s):  
Ji Eun Kim ◽  
Won Tae Kang ◽  
Van Tu Vu ◽  
Young Rae Kim ◽  
Yong Seon Shin ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Atomic Scale ◽  
Two Dimensional ◽  
Contact Interface ◽  
High Responsivity ◽  
Tight Contact ◽  
Specific Detectivity ◽  
Silicon Based ◽  
Lateral Heterostructure

As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

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