An aqueous solution method towards Sb2S3 thin films for photoanodes

2019 ◽  
Vol 55 (96) ◽  
pp. 14530-14533
Author(s):  
Panping Zhong ◽  
Juan Xie ◽  
Robabeh Bagheri ◽  
Qinghua Yi ◽  
Qi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Vapor Deposition ◽  
Solution Method ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
High Quality ◽  
Solution Approach ◽  
Layer Deposition ◽  
Aqueous Solution Method

An aqueous solution approach, integrating atomic layer deposition and chemical vapor deposition, is proposed to grow high-quality Sb2S3 thin films.

Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor

2016 ◽  
Vol 51 (11) ◽  
pp. 5082-5091 ◽  
Author(s):  
Hanearl Jung ◽  
Woo-Hee Kim ◽  
Il-Kwon Oh ◽  
Chang-Wan Lee ◽  
Clement Lansalot-Matras ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Growth Characteristics ◽  
Layer Deposition

Atomic Layer Deposition of Solid Lubricant Thin Films

2005 ◽  
Author(s):  
T. W. Scharf ◽  
S. V. Prasad ◽  
M. T. Dugger ◽  
T. M. Mayer
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Aspect Ratios ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Tungsten disulphide (WS2) and molybdenum disulfide (MoS2), which belong to the family of transition metal dichalcogenides, are well known for their solid lubricating behavior. Thin films of MoS2 and WS2 exhibit extremely low coefficient of friction (COF ∼0.02 to 0.05) in dry environments, and are typically applied by sputter deposition, pulsed laser ablation, evaporation or chemical vapor deposition, which are essentially either line-of-sight or high temperature processes. With these techniques it is difficult to coat surfaces shadowed from the target, or uniformly coat sidewalls of three-dimensional or high aspect ratio structures. For applications such as micromechanical (MEMS) devices, where dimensions and separation tolerances are small, and aspect ratios are large, these traditional deposition techniques are inadequate. Atomic layer deposition (ALD) is a chemical vapor deposition technique that could overcome many of these problems by using sequential introduction of gaseous precursors and selective surface chemistry to achieve controlled growth at lower temperatures, but the chemistry needed to grow transition metal dichalcogenide films by ALD is not known.

scholarly journals Monitoring Surface Stoichiometry, Work Function and Valance Band of Tungsten Oxide (WO3), Molybdenum Oxide (MoO3) and Tin Oxide (SnO2) Thin Films as a Function of Temperature and Oxygen Partial Pressure with Advanced Surface Sensitive Techniques for Chemical Sensing Applications

Proceedings ◽  
2019 ◽  
Vol 14 (1) ◽  
pp. 27 ◽  
Author(s):  
Ciftyurek ◽  
Wilken ◽  
Zanders ◽  
Mai ◽  
Devi ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Sensing ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Method ◽  
High Quality ◽  
Sensing Applications ◽  
Layer Deposition ◽  
Sno2 Thin Films

Atomic layer deposition (ALD) is a chemical vapor deposition (CVD) deposition method inwhich high-quality [...]

InGaN Layers Grown on Al2O3/ZnO Substrates Prepared by Atomic Layer Deposition

2007 ◽  
Vol 1035 ◽  
Author(s):  
Nola Li ◽  
Shen-Jie Wang ◽  
Jeff Nause ◽  
Adriana Valencia ◽  
Christopher Summers ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Passivation Layer ◽  
Ingan Layer ◽  
High Quality ◽  
Layer Deposition ◽  
Short Annealing

AbstractAtomic layer deposition (ALD) of Al2O3 is used as a passivation layer on ZnO substrates before nitride growth by metalorganic chemical vapor deposition (MOCVD). This layer is being used to prevent Zn diffusion from the substrate, protect the ZnO surface from H2 back etching, and promote high quality nitride growth. ALD-Al2O3 films were grown at 100°C and then annealed in a furnace at various times at 1100°C for crystallization of the passivation layer. XRD results showed both Al2O3 and ZnAl2O4 phases at different intensities for 50 and 20nm ALD-AlM2O3 films. In addition, the InGaN layer has been successfully grown on the passivated ZnO substrate. Findings show that a short annealing time for the ALD-Al2O3 layer will be optimal for InGaN growth.

scholarly journals Applications of atomic layer deposition and chemical vapor deposition for perovskite solar cells

2020 ◽  
Vol 13 (7) ◽  
pp. 1997-2023 ◽  
Author(s):  
James A. Raiford ◽  
Solomon T. Oyakhire ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A review on the versatility of atomic layer deposition and chemical vapor deposition for the fabrication of stable and efficient perovskite solar cells.

Atomic layer deposition of h-BN(0001) multilayers on Ni(111) and chemical vapor deposition of graphene on h-BN(0001)/Ni(111)

2019 ◽  
Vol 37 (6) ◽  
pp. 060903 ◽  
Author(s):  
Jessica Jones ◽  
Aparna Pilli ◽  
Veronica Lee ◽  
John Beatty ◽  
Brock Beauclair ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

Pre-Patterned CVD Graphene: Insights on ALD deposition parameters and their influence on Al2O3 and graphene layers

MRS Advances ◽  
2016 ◽  
Vol 1 (20) ◽  
pp. 1401-1409 ◽  
Author(s):  
Gabriela B. Barin ◽  
Antonio G. Souza Filho ◽  
Ledjane S. Barreto ◽  
Jing Kong
Keyword(s):  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Graphene Layers ◽  
Deposition Parameters ◽  
Layer Deposition ◽  
Cvd Growth ◽  
Selective Chemical ◽  
Number Of Cycles

ABSTRACTFabrication of graphene nanostructures it is important for both investigating their intrinsic physical properties and applying them into various functional devices. In this work we present a study on atomic layer deposition (ALD) of Al2O3 to produce patterned graphene through area-selective chemical vapor deposition (CVD) growth. A systematic parametric study was conducted to determine how the number of cycles and the purging time affect the morphology and the electrical properties of both graphene and Al2O3 layers.

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