Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films

2019 ◽  
Vol 21 (17) ◽  
pp. 8843-8848 ◽  
Author(s):  
Jamal Shaibo ◽  
Rui Yang ◽  
Zhe Wang ◽  
He-Ming Huang ◽  
Jue Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Bond Length ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Electrical Field ◽  
External Electrical Field ◽  
Field Control

Resistive switching and magnetization in epitaxial LaBaCo2O5+δ films can be controlled through an external electrical field, and the switching is related to the tuning of oxygen vacancies and the Co–O–Co bond length.

Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field

2020 ◽  
Vol 22 (7) ◽  
pp. 3867-3874 ◽  
Author(s):  
Yurong Ruan ◽  
Lu Huang ◽  
Yanmin Yang ◽  
Guigui Xu ◽  
Kehua Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Electric Field ◽  
External Electric Field ◽  
Topological Insulator ◽  
Electrical Field ◽  
External Electrical Field

The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.

scholarly journals Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

RSC Advances ◽  
2017 ◽  
Vol 7 (61) ◽  
pp. 38757-38764 ◽  
Author(s):  
Shuai He ◽  
Aize Hao ◽  
Ni Qin ◽  
Dinghua Bao
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Zno Thin Films ◽  
Switching Performance ◽  
Ion Doping ◽  
Doped Zno

The resistive switching performance of ZnO thin films can be enhanced by decreasing the band gap and controlling oxygen vacancies.

Resistive switching and electric field control of ferromagnetism in SnO2 films deposited at room temperature

2019 ◽  
Vol 475 ◽  
pp. 368-373 ◽  
Author(s):  
Xinran Liu ◽  
Jianpei Bu ◽  
Xue Ren ◽  
Bin Cheng ◽  
Jihao Xie ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Room Temperature ◽  
Field Control

Electric field-driven resistive switching in magnetoresistive La0.5Ca0.5MnO3 thin films

2004 ◽  
Vol 354 (1-4) ◽  
pp. 11-15 ◽  
Author(s):  
S. Duhalde ◽  
M. Villafuerte ◽  
G. Juárez ◽  
S.P. Heluani
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Resistive Switching

Electric-Field Control of Magnetism in Complex Oxide Thin Films

MRS Bulletin ◽  
2008 ◽  
Vol 33 (11) ◽  
pp. 1047-1050 ◽  
Author(s):  
Nicola A. Spaldin ◽  
R. Ramesh
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Electric Fields ◽  
Magnetic Behavior ◽  
Complex Oxide ◽  
Future Research ◽  
Oxide Thin Films ◽  
Field Control ◽  
Magnetoelectric Response ◽  
Review Current

AbstractIn this article, we review current research efforts to control the magnetic behavior of complex oxide thin films using electric fields. After providing fundamental definitions of magnetoelectric response, we survey materials, architectures, and mechanisms that exhibit promise for such electric-field control of magnetism. Finally, we mention ideas for future research and discuss prospects for the field.

The `Octopus' plate for protein crystallization under an electric field

2003 ◽  
Vol 36 (6) ◽  
pp. 1482-1483 ◽  
Author(s):  
C. Charron ◽  
C. Didierjean ◽  
J. P. Mangeot ◽  
A. Aubry
Keyword(s):  
Electric Field ◽  
Protein Crystallization ◽  
Electrical Field ◽  
External Electrical Field ◽  
Vapour Diffusion

A piece of equipment, adapted to a vapour-diffusion plate, has been designed to apply an external electrical field during the crystallization of protein samples.

Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure

2018 ◽  
Vol 434 ◽  
pp. 822-830 ◽  
Author(s):  
Andrey Sergeevich Sokolov ◽  
Yu-Rim Jeon ◽  
Sohyeon Kim ◽  
Boncheol Ku ◽  
Donghwan Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

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