Structural control of the dielectric, pyroelectric and ferroelectric properties of poly(vinylidene fluoride-co-trifluoroethylene) thin films

2020 ◽  
Vol 22 (4) ◽  
pp. 2414-2423 ◽  
Author(s):  
C. Y. B. Ng ◽  
W. C. Gan ◽  
T. S. Velayutham ◽  
B. T. Goh ◽  
R. Hashim
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Structural Control ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Molecular Motions ◽  
Poly Vinylidene Fluoride

P(VDF-TrFE) is optimized effectively via thermal treatment and its molecular motions after poling are revealed.

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Polymer Thin Films ◽  
Annealing Process ◽  
Memory Devices ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

Thickness Dependence of Electrical Properties in Poly(vinylidene Fluoride Trifluoroethylene) Copolymer Thin Films

2011 ◽  
Vol 295-297 ◽  
pp. 2049-2056 ◽  
Author(s):  
Li Tian ◽  
Sheng Zhao Yuan ◽  
Jing Lan Sun ◽  
Xiang Jian Meng ◽  
Jian Lu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Transition Temperature ◽  
Film Thickness ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Interfacial Layers ◽  
Poly Vinylidene Fluoride ◽  
Ac Field ◽  
Ferroelectric Transition Temperature

The effect of the thickness on the dielectric and ferroelectric properties of poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] copolymer thin films were investigated. The results show that the dielectric constant and tunability increase while the coercive field decreases with increasing film thickness. The film thickness also affects both the reversible and irreversible Raleigh parameters in the ac field dependence of dielectric constant. The observed phenomenon can be explained by the existence of interfacial layers between electrodes and film. No obvious thickness-dependent microstructure and ferroelectric transition temperature was observed.

scholarly journals Giant spontaneous polarization for enhanced ferroelectric properties of biaxially oriented poly(vinylidene fluoride) by mobile oriented amorphous fractions

2021 ◽  
Author(s):  
Guanchun Rui ◽  
Yanfei Huang ◽  
Xinyue Chen ◽  
Ruipeng Li ◽  
Dingrui Wang ◽  
...  
Keyword(s):  
Spontaneous Polarization ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Amorphous Fraction ◽  
Poly Vinylidene Fluoride

Oriented amorphous fraction in biaxially oriented poly(vinylidene fluoride) gives it significantly enhanced dielectric and ferroelectric properties.

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates

2010 ◽  
Vol 519 (4) ◽  
pp. 1441-1444 ◽  
Author(s):  
Sharon Roslyn Oh ◽  
Kui Yao ◽  
Choi Lan Chow ◽  
Francis Eng Hock Tay
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vinylidene Fluoride ◽  
Silicon Substrates ◽  
Poly Vinylidene Fluoride
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