Quantifying the rigidity of 2D carbides (MXenes)

2020 ◽  
Vol 22 (4) ◽  
pp. 2115-2121 ◽  
Author(s):  
Tao Hu ◽  
Jinxing Yang ◽  
Wu Li ◽  
Xiaohui Wang ◽  
Chang Ming Li

The intrinsic in-plane stiffness (C) and out-of-plane rigidity (D) of four typical MXenes are quantified by first-principles calculations, with both exhibiting a strong thickness-dependent character.

2021 ◽  
Vol 9 (13) ◽  
pp. 4554-4561
Author(s):  
Yinti Ren ◽  
Liang Hu ◽  
Yangfan Shao ◽  
Yijian Hu ◽  
Li Huang ◽  
...  

The magnetic properties of 45 2D metals are explored using first-principles calculations. Of the 45 2D metals, 18 are found to be magnetic due to a coordination number decrease and the energy band narrowing of the out-of-plane d orbitals.


RSC Advances ◽  
2020 ◽  
Vol 10 (38) ◽  
pp. 22556-22569
Author(s):  
Yue Wang ◽  
Liying Wang ◽  
Wenbo Mi

The complete spin polarizations of Mn2.25Co0.75Al1−xGex are proved to be robust against stoichiometric defect and lattice deformation, whose easy magnetization direction can be manipulated from in-plane direction to out-of-plane one under uniaxial strain.


Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2509
Author(s):  
Yue Jiang ◽  
Yandong Guo ◽  
Xiaohong Yan ◽  
Hongli Zeng ◽  
Liyan Lin ◽  
...  

Due to the weak van der Waals (vdW) interlayer interaction, interfacial geometry of two-dimensional (2D) magnetic vdW materials can be freely assembled, and the stacking order between layers can be readily controlled, such as laterally shifting or rotating, which may trigger the variation of magnetic order. We investigate the H-type bilayer CrI3 where the two layers are aligned in anti-parallel directions. Based on first-principles calculations, we propose two states with different interlayer magnetic couplings, i.e., ferromagnetic and antiferromagnetic, and analyze the superexchange mechanism inside. It is found that the two magnetic coupling states are stacking-dependent, and could be switched by applying out-of-plane axial strain and electron doping. Our findings show great application potential in the design of heterostructural and spintronic devices based on 2D magnetic vdW materials.


2020 ◽  
Vol 25 (4) ◽  
pp. 22-27
Author(s):  
Marina V. Mamonova ◽  
Irina A. Prudnikova

In this work, the results of numerical first-principles calculations of the magnetic characteristics for Co and Fe monolayer films on Cu(100) and Pt(100) slabs by using the VASP software package are presented. The values of the difference in the total energy of antiferromagnetic and ferromagnetic configurations depending on the parameters of convergence and thickness of non-magnetic material are calculated. Favorable magnetic anisotropy energy and values of the magnetic moment of atoms in the Co/Cu/Co, Co/Pt/Co, and Pt/Co/Cu/Co/Pt structures are determined. The phenomenon of reorientation in the Co/Cu(100)/Co structure, when the in-plane anisotropy of the cobalt films changes to an out-of-plane anisotropy due to the incorporation of an ultrathin platinum film into the structure is confirmed.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yan Liang ◽  
Ning Mao ◽  
Ying Dai ◽  
Liangzhi Kou ◽  
Baibiao Huang ◽  
...  

AbstractThe intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to design such system is unclear and the feasible approach to achieve the coexistence of two parameter orders is absent. Here, we propose a general paradigm to design 2D ferroelectric topological insulators by sliding topological multilayers on the basis of first-principles calculations. Taking trilayer Bi2Te3 as a model system, we show that in the van der Waals multilayer based 2D topological insulators, the in-plane and out-of-plane ferroelectricity can be induced through a specific interlayer sliding, to enable the coexistence of ferroelectric and topological orders. The strong coupling of the order parameters renders the topological states sensitive to polarization flip, realizing non-volatile ferroelectric control of topological properties. The revealed design-guideline and ferroelectric-topological coupling not only are useful for the fundamental research of the coupled ferroelectric and topological physics in 2D lattices, but also enable innovative applications in nanodevices.


2019 ◽  
Vol 10 ◽  
pp. 1943-1951 ◽  
Author(s):  
Ximing Rong ◽  
Zhizhou Yu ◽  
Zewen Wu ◽  
Junjun Li ◽  
Bin Wang ◽  
...  

Black phosphorus (BP) has a pressure-dependent bandgap width and shows the potential for applications as a low-dimensional pressure sensor. We built two kinds of pure BP devices with zigzag or armchair conformation, and explored their pressure-dependent conductance in detail by using first principles calculations. The zigzag BP devices and the armchair BP devices exhibit different conductance–pressure relationships. For the zigzag BP devices conductance is robust against stress when the out-of-plane pressure ratio is less than 15%, and then increases rapidly until the conductive channels are fully opened. For the armchair pure BP devices conductance decreases at first by six orders of magnitude under increasing pressure and then increases quickly with further increase of pressure until the devices enter the on-state. This shows that the pure zigzag BP devices are more suitable for the application as flexible electronic devices with almost constant conductance under small pressure, while armchair BP devices can serve as bidirectional pressure sensors. Real-space distributions of band alignments were explored to understand the different pressure-related properties. We fitted a set of parameters based on the results from the empirical Wentzel–Kramers–Brillouin method, which provides an effortless approximation to quantitatively predict the pressure-related behaviors of large pure BP devices.


Author(s):  
Jinlong Ma ◽  
Baoling Huang ◽  
Wu Li ◽  
Xiaobing Luo

The thermal conductivities of the alloys of wurtzite AlN, GaN and InN are usually analyzed with the virtual crystal model based on the values of the constituent compounds. However, latest experiments and calculations reveal that the thermal conductivity of wurtzite InN is about three times larger than the previously used value. Thus it is necessary to reanalyze the thermal conductivities of these alloys. In this work, the intrinsic thermal conductivities of AlxGa1−xN, InxGa1−xN and InxAl1−xN are calculated with first-principles calculations along with the virtual crystal treatment. It is found that the thermal conductivities of these alloys are strongly suppressed even after a small amount of alloying. For instance, the in-plane and out-of-plane thermal conductivities of In0.99Ga0.01 N are 66 Wm−1K−1 and 76 Wm−1K−1 respectively, while they are 40 Wm−1K−1 and 48 Wm−1 K−1 for In0.99Al0.01 N, compared with the corresponding values of 130 Wm−1 K−1 and 145 Wm−1 K−1 for bulk wurtzite InN. When the fraction x varies from 0.2 to 0.8, the thermal conductivities of the alloys do not change much. Additionally, the distribution of mean free path indicates that the size effect can persist up to 10μm for both pure compounds and their alloys at room temperature.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sabyasachi Tiwari ◽  
Maarten L. Van de Put ◽  
Bart Sorée ◽  
William G. Vandenberghe

AbstractUsing first-principles calculations, we investigate the magnetic order in two-dimensional (2D) transition-metal-dichalcogenide (TMD) monolayers: MoS2, MoSe2, MoTe2, WSe2, and WS2 substitutionally doped with period four transition-metals (Ti, V, Cr, Mn, Fe, Co, Ni). We uncover five distinct magnetically ordered states among the 35 distinct TMD-dopant pairs: the non-magnetic (NM), the ferromagnetic with out-of-plane spin polarization (Z FM), the out-of-plane polarized clustered FMs (clustered Z FM), the in-plane polarized FMs (X–Y FM), and the anti-ferromagnetic (AFM) state. Ni and Ti dopants result in an NM state for all considered TMDs, while Cr dopants result in an anti-ferromagnetically ordered state for all the TMDs. Most remarkably, we find that Fe, Mn, Co, and V result in an FM ordered state for all the TMDs, except for MoTe2. Finally, we show that V-doped MoSe2 and WSe2, and Mn-doped MoS2, are the most suitable candidates for realizing a room-temperature FM at a 16–18% atomic substitution.


2014 ◽  
Vol 52 (12) ◽  
pp. 1025-1029
Author(s):  
Min-Wook Oh ◽  
Tae-Gu Kang ◽  
Byungki Ryu ◽  
Ji Eun Lee ◽  
Sung-Jae Joo ◽  
...  

2019 ◽  
Author(s):  
Michele Pizzocchero ◽  
Matteo Bonfanti ◽  
Rocco Martinazzo

The manuscript addresses the issue of the structural distortions occurring at multiple bonds between high main group elements, focusing on group 14. These distortions are known as trans-bending in silenes, disilenes and higher group analogues, and buckling in 2D materials likes silicene and germanene. A simple but correlated \sigma + \pi model is developed and validated with first-principles calculations, and used to explain the different behaviour of second- and higher- row elements.


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