A universal solution processed interfacial bilayer enabling ohmic contact in organic and hybrid optoelectronic devices

A bilayer of Nb-TiO2 and bathocuproine forms a highly ohmic contact between a wide variety of semiconducting materials and metal electrodes. This enables performance and stability improvements in a range of electronic devices.

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Synthesis and use of a hyper-connecting cross-linking agent in the hole-transporting layer of perovskite solar cells

Journal of Materials Chemistry A ◽

10.1039/c7ta05004f ◽

2017 ◽

Vol 5 (36) ◽

pp. 19267-19279 ◽

Cited By ~ 15

Author(s):

Brian L. Watson ◽

Nicholas Rolston ◽

Kevin A. Bush ◽

Leila Taleghani ◽

Reinhold H. Dauskardt

Keyword(s):

Solar Cells ◽

Low Cost ◽

Perovskite Solar Cells ◽

Optoelectronic Devices ◽

Cross Linking ◽

Semiconducting Materials ◽

Solution Processed ◽

Organic Semiconducting Materials ◽

Hole Transporting

Solution-processed organic semiconducting materials feature prominently in modern optoelectronic devices, especially where low-cost and flexibility are specific goals, such as perovskite solar cells.

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Layer‐By‐Layer Printing Strategy for High‐Performance Flexible Electronic Devices with Low‐Temperature Catalyzed Solution‐Processed SiO 2

Small Methods ◽

10.1002/smtd.202100263 ◽

2021 ◽

pp. 2100263

Author(s):

Qingqing Sun ◽

Tianqi Gao ◽

Xiaomeng Li ◽

Wanli Li ◽

Xiaoqian Li ◽

...

Keyword(s):

Low Temperature ◽

High Performance ◽

Electronic Devices ◽

Layer By Layer ◽

Solution Processed ◽

Flexible Electronic ◽

Flexible Electronic Devices

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P‐4.12: The Development of Metal Oxide Nanoparticles as Charge Transport Layers in Solution‐processed Optoelectronic Devices

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14540 ◽

2021 ◽

Vol 52 (S1) ◽

pp. 516-516

Author(s):

Liu Yuqing ◽

Wei Jiangliu ◽

Li yang

Keyword(s):

Metal Oxide ◽

Charge Transport ◽

Metal Oxide Nanoparticles ◽

Optoelectronic Devices ◽

Oxide Nanoparticles ◽

Solution Processed

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Versatile Solution‐Processed Organic–Inorganic Hybrid Superlattices for Ultraflexible and Transparent High‐Performance Optoelectronic Devices

Advanced Functional Materials ◽

10.1002/adfm.202103285 ◽

2021 ◽

pp. 2103285

Author(s):

Minh Nhut Le ◽

Kang‐Jun Baeg ◽

Kyung‐Tae Kim ◽

Seung‐Han Kang ◽

Byung Doo Choi ◽

...

Keyword(s):

High Performance ◽

Optoelectronic Devices ◽

Solution Processed ◽

Inorganic Hybrid

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Systematic Review on Human Skin-Compatible Wearable Photoplethysmography Sensors

Applied Sciences ◽

10.3390/app11052313 ◽

2021 ◽

Vol 11 (5) ◽

pp. 2313

Author(s):

Inho Lee ◽

Nakkyun Park ◽

Hanbee Lee ◽

Chuljin Hwang ◽

Joo Hee Kim ◽

...

Keyword(s):

Systematic Review ◽

Health Care ◽

Real Time ◽

Human Skin ◽

State Of The Art ◽

Electronic Devices ◽

Semiconducting Materials ◽

Physiological Conditions ◽

Technological Developments ◽

Monitoring Technologies

The rapid advances in human-friendly and wearable photoplethysmography (PPG) sensors have facilitated the continuous and real-time monitoring of physiological conditions, enabling self-health care without being restricted by location. In this paper, we focus on state-of-the-art skin-compatible PPG sensors and strategies to obtain accurate and stable sensing of biological signals adhered to human skin along with light-absorbing semiconducting materials that are classified as silicone, inorganic, and organic absorbers. The challenges of skin-compatible PPG-based monitoring technologies and their further improvements are also discussed. We expect that such technological developments will accelerate accurate diagnostic evaluation with the aid of the biomedical electronic devices.

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Ohmic contact for high-performance organic electronic devices

10.1117/12.505108 ◽

2003 ◽

Author(s):

Liping Ma ◽

Yang Yang

Keyword(s):

Ohmic Contact ◽

High Performance ◽

Electronic Devices ◽

Organic Electronic Devices ◽

Organic Electronic

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Erbium Tris(Amide) Compounds as Source Molecules FOR Rare Earth Doping of Semiconducting Materials

MRS Proceedings ◽

10.1557/proc-415-111 ◽

1995 ◽

Vol 415 ◽

Cited By ~ 1

Author(s):

Oliver Just ◽

Anton C. Greenwald ◽

William S. Rees

Keyword(s):

Rare Earth ◽

Solid State ◽

Earth Element ◽

Optoelectronic Devices ◽

Analytical Techniques ◽

Optically Active ◽

Rare Earth Doping ◽

Semiconducting Materials ◽

Host Materials ◽

Erbium Doped

ABSTRACTThe homoleptic compound erbium{tris[bis (trimethylsilyl)]amide} displays high doping ability for incorporation of the rare earth element into epitaxially grown semiconducting host materials for fabrication of temperature-independent, monochromatic solid state optoelectronic devices. Electronic characteristics derived from erbium doped semiconducting films have been obtained. Several more volatile and lower melting representatives of this class of compounds have been synthesized, characterized by various analytical techniques and examined for their suitability to incorporate optically-active erbium centers into a semiconducting environment.

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