Bulk ion-clustering and surface ion-layering effects on work function of self-compensated charged-doped polymer semiconductors
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Self-compensated hole- and electron-doped polyelectrolytes can afford 0.1 eV tuning steps in work function of charge injection/collection layers through the tethered anions. These material systems are further immune to ‘dopant’ migration.
1984 ◽
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2007 ◽
Vol 21
(23n24)
◽
pp. 4190-4195
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