Highly enhanced thermoelectric properties of nanostructured Bi2S3 bulk materials via carrier modification and multi-scale phonon scattering

2019 ◽  
Vol 6 (6) ◽  
pp. 1374-1381 ◽  
Author(s):  
Yi Wu ◽  
Qing Lou ◽  
Yang Qiu ◽  
Jun Guo ◽  
Zhi-Yuan Mei ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Bulk Materials ◽  
Multi Scale ◽  
Multiscale Structure ◽  
Strong Scattering

Low lattice thermal conductivity for LaCl3-doped samples is obtained via a multiscale structure and strong scattering by point defects, dislocations and grain boundaries.

Vacancy Phonon Scattering and Thermoelectric Properties in In2Te3–SnTe Compounds

2010 ◽  
Vol 650 ◽  
pp. 126-131 ◽  
Author(s):  
Hong Fu ◽  
Peng Zhan Ying ◽  
J.L. Cui ◽  
Y.M. Yan ◽  
X.J. Zhang
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Point Defects ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Chemical Compositions ◽  
Thermoelectric Figure ◽  
Solid Solution Formation ◽  
Solution Formation

Solid solution formation is a common and effective way to reduce the lattice thermal conductivity for thermoelectric materials because of additional phonon scattering by point defects and grain boundaries. In the present work we prepared In2Te3–SnTe compounds using a mild solidification technique and evaluated their thermoelectric properties in the temperature range from 318705 K. Measurements reveal that the transport properties are strongly dependent on the chemical composition  In2Te3 content, and lattice thermal conductivity significantly reduces above a minimum In2Te3 concentration, which can possibly be explained by an introduction of the vacancy on the indium sublattice and periodical vacancy planes. The highest thermoelectric figure of merit ZT of 0.19 can be achieved at 705 K, and a big improvement of In2Te3 based alloys would be expected if a proper optimization to the chemical compositions and structures were made.

Thermoelectric Properties of AgBiTe2-Ag2Te Composite

1998 ◽  
Vol 545 ◽  
Author(s):  
Y. Takigawa ◽  
T. Imoto ◽  
T. Sakakibara ◽  
K. Kurosawa
Keyword(s):  
Thermal Conductivity ◽  
Composite Materials ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Lattice Vibrations ◽  
Thermoelectric Devices ◽  
Long Wavelength ◽  
Prepared Composite

AbstractWe prepared composite materials of AgBiTe2 with several contents of Ag2Te small-size grains for applications to thermoelectric devices. By enhancing long-wavelength phonon scattering at the grain boundaries, lattice thermal conductivity (thermal conductivity due to lattice vibrations) decreased 30% and thus the thermoelectric characteristics were significantly improved.

scholarly journals Effect of ZnO and SnO2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2270
Author(s):  
Sang-il Kim ◽  
Jiwoo An ◽  
Woo-Jae Lee ◽  
Se Kwon ◽  
Woo Nam ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Atomic Layer Deposition ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Atomic Layer ◽  
Deposition Method ◽  
Plasma Sintering ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.

EFFECT OF EMBEDDING NANOPARTICLES ON THERMAL CONDUCTIVITY OF CRYSTALLINE SEMICONDUCTORS: PHONON SCATTERING MECHANISM

2009 ◽  
Vol 08 (06) ◽  
pp. 551-556 ◽  
Author(s):  
K. K. CHOUDHARY ◽  
D. PRASAD ◽  
K. JAYAKUMAR ◽  
DINESH VARSHNEY
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Lattice Thermal Conductivity ◽  
Present Model ◽  
Phonon Scattering ◽  
Scattering Mechanism ◽  
Temperature Dependent ◽  
Pure Crystal ◽  
Model Hamiltonian ◽  
Heat Carriers

We evolve a theoretical model for quantitative analysis of decrease in thermal conductivity (κ) by embedding ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors. The lattice thermal conductivity by incorporating the scattering of phonons with defects, grain boundaries, electrons, and phonons in the model Hamiltonian are evaluated. It is noticed that the ErAs nanoparticles provide an additional scattering mechanism for phonons. The embedding of ErAs nanoparticles in In0.53Ga0.47As crystalline semiconductors, the phonon scattering with point defects and grain boundaries become more efficient, which cause in the decrease of thermal conductivity up to half of its value of pure crystal. Conclusively, the temperature dependent of thermal conductivity is determined by competition among the several operating scattering mechanisms for the heat carriers. Numerical analysis of thermal conductivity from the present model shows similar results as those revealed from experiments.

Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Science ◽  
2015 ◽  
Vol 348 (6230) ◽  
pp. 109-114 ◽  
Author(s):  
Sang Il Kim ◽  
Kyu Hyoung Lee ◽  
Hyeon A Mun ◽  
Hyun Sik Kim ◽  
Sung Woo Hwang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Maximum Temperature ◽  
Bismuth Antimony Telluride ◽  
Maximum Temperature Difference ◽  
Full Spectrum ◽  
Dislocation Arrays ◽  
Bulk Alloys

The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). ThezTof bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi0.5Sb1.5Te3(bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved thezTto 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.

scholarly journals First-principles prediction of structural stability and thermoelectric properties of SrGaSnH

RSC Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 3304-3314
Author(s):  
Enamul Haque ◽  
Mizanur Rahaman
Keyword(s):  
Thermal Conductivity ◽  
Structural Stability ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Weak anharmonicity: the weak anharmonicity leads to weak phonon scattering in SrGaSnH. Thus, SrGaSnH intrinsically possesses a high lattice thermal conductivity (kl).. Such large κl dramatically reduces the thermoelectric figure of merit.

Low-Temperature Thermoelectric Properties of Zn4Sb3 Prepared by Hot Pressing

2006 ◽  
Vol 510-511 ◽  
pp. 1070-1073 ◽  
Author(s):  
Il Ho Kim ◽  
J.B. Park ◽  
Tae Whan Hong ◽  
Soon Chul Ur ◽  
Young Geun Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Total Thermal Conductivity ◽  
Thermoelectric Figure ◽  
Scattering Centers

Zn4Sb3 was successfully produced by a hot pressing technique, and its thermoelectric properties were investigated in the temperature range from 4K to 300K. The Seebeck coefficient, electrical conductivity, thermal conductivity, and thermoelectric figure of merit showed a discontinuity in variation at 242K, indicating the α-Zn4Sb3 to β-Zn4Sb3 phase transformation. Lattice thermal conductivity was found to be dominant in the total thermal conductivity of Zn4Sb3. Therefore, it is expected that thermoelectric properties can be improved by reducing the lattice thermal conductivity inducing phonon scattering centers.

scholarly journals Review of the Thermoelectric Properties in Nanostructured Fe2VAl

Metals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 864 ◽  
Author(s):  
Eric Alleno
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
High Pressure Torsion ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Average Grain Size

Besides alloying, nanostructuring was implemented to improve the thermoelectric properties in Fe2VAl. This Heusler alloy indeed displays a thermoelectric figure of merit too small for applications (ZT ~ 0.1 at 300 K) which is caused by a large lattice thermal conductivity (λL = 27 W·m−1·K−1 at 300 K). The effect of nanostructuring on the microstructure and on the thermoelectric properties of alloyed Fe2VAl are therefore reviewed. By mechanical alloying followed by spark plasma sintering, the average grain size (D) was decreased to D ~ 300–400 nm in Fe2VAl0.9Si0.1, Fe2VAl0.9Si0.07Sb0.03, Fe2V1.05Al0.95, and Fe2V0.9W0.1Al. As expected, phonon scattering at the numerous grain boundaries lead to a strong decrease in the lattice thermal conductivity, which reached values as small as λL = 3.3 W·m−1·K−1. However, in all the reviewed examples, the thermoelectric figure of merit (ZT) is only marginally or not even improved when comparing to non-nanostructured samples because the electrical resistivity also increases upon nanostructuring. A significantly improved ZT = 0.3 at 500 K was only recently observed in severely deformed Fe2VAl0.95Ta0.05 by high pressure torsion because the very fine microstructure (D ~ 100 nm) strongly enhanced the thermal conductivity reduction.

scholarly journals Synthesis and Thermoelectric Properties of C60/Cu2GeSe3Composites

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Degang Zhao ◽  
Jiai Ning ◽  
Shuyu Li ◽  
Min Zuo
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Grain Boundaries ◽  
Ball Milling ◽  
Thermoelectric Properties ◽  
Phonon Scattering ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Average Size

Nanosized C60powder was sufficiently incorporated with Cu2GeSe3powder by ball milling and C60/Cu2GeSe3composites were prepared by spark plasma sintering. C60distributed uniformly in the form of clusters and the average size of cluster was lower than 1 μm. With the addition of C60increasing, the electrical resistivity and Seebeck coefficient of C60/Cu2GeSe3composites increased while the thermal conductivity decreased significantly which resulted from the phonon scattering by C60clusters locating on the grain boundaries of Cu2GeSe3matrix. The maximumZTof 0.20 was achieved at 700 K for 0.9% C60/Cu2GeSe3sample.

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

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