Nitrogen-doped vertical graphene nanosheets by high-flux plasma enhanced chemical vapor deposition as efficient oxygen reduction catalysts for Zn–air batteries

2020 ◽  
Vol 8 (44) ◽  
pp. 23248-23256
Author(s):  
Zhiheng Wu ◽  
Yongshang Zhang ◽  
Lu Li ◽  
Yige Zhao ◽  
Yonglong Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Nanosheets ◽  
Chemical Vapor ◽  
Catalytic Performance ◽  
High Flux ◽  
Oxygen Reduction Catalysts ◽  
Temperature Deposition ◽  
Reduction Catalysts

Low temperature deposition of N-doped vertical graphene realized at low temperature lab-built high-flux plasma enhanced chemical vapor deposition (HPECVD) system, with outstanding catalytic performance enabled for ORR in Zn–air batteries.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 1079-1082 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Ozeki ◽  
Eisuke Tokumitsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Metalorganic Chemical

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

Low-temperature deposition of diamond using chloromethane in a hot-filament chemical vapor deposition reactor

1993 ◽  
Vol 2 (2-4) ◽  
pp. 365-372 ◽  
Author(s):  
Franklin Chau-Nan Hong ◽  
Jing-Chuang Hsieh ◽  
Jih-Jen Wu ◽  
Gou-Tsau Liang ◽  
Jen-Haw Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Reactor ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Hot Filament

High-Performance Fe-N-C Oxygen Reduction Catalysts Synthesized Via Chemical Vapor Deposition

2021 ◽  
Vol MA2021-01 (46) ◽  
pp. 1836-1836
Author(s):  
Li Jiao ◽  
Sanjeev Mukerjee ◽  
Deborah J. Myers ◽  
Frédéric Jaouen ◽  
Qingying Jia
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxygen Reduction ◽  
Vapor Deposition ◽  
High Performance ◽  
Chemical Vapor ◽  
Oxygen Reduction Catalysts ◽  
Reduction Catalysts
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