Strain-mediated bandgap engineering of straight and bent semiconductor nanowires
Keyword(s):
A simple unit-cell model capable of describing the bandgap evolution of III–V and II–VI semiconductor nanowires under strain is proposed. Three key responses upon strain are found and investigated in both wurtzite and zinc-blende polytypes.
2018 ◽
Vol 288
◽
pp. 012069
◽
Keyword(s):
Keyword(s):
2008 ◽
Vol 39
(9)
◽
pp. 1433-1443
◽
Keyword(s):
2011 ◽
Vol 488-489
◽
pp. 759-762
Keyword(s):
2006 ◽
Vol 43
(2)
◽
pp. 266-278
◽
Keyword(s):
Keyword(s):
2017 ◽
Vol 30
(4)
◽
pp. 1417-1426
◽
Keyword(s):
2015 ◽
Vol 118
◽
pp. 276-283
◽
2011 ◽
Vol 406
(8)
◽
pp. 1379-1384
◽
Keyword(s):