scholarly journals Fabrication of voltage-gated spin Hall nano-oscillators

Nanoscale ◽  
2022 ◽  
Author(s):  
Akash Kumar ◽  
Mona Rajabali ◽  
Victor Hugo González ◽  
Mohammad Zahedinejad ◽  
Afshin Houshang ◽  
...  
Keyword(s):  
Electric Field ◽  
Fabrication Process ◽  
Voltage Gated ◽  
Voltage Gate

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam...

Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask

2006 ◽  
Vol 527-529 ◽  
pp. 1203-1206 ◽  
Author(s):  
Takeyoshi Masuda ◽  
Kazuhiro Fujikawa ◽  
Kaoru Shibata ◽  
Hideto Tamaso ◽  
Satoshi Hatsukawa ◽  
...  
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Fabrication Process ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Dry Process ◽  
Metal Mask ◽  
Surface Field ◽  
Reduced Surface

We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure, which can prevent the concentration of electric field at the edge of the gate metal [1]. Previously, we reported on the 4H-SiC RESURF JFET with a gate length (LG) of 10 μm [2]. Its specific on-resistance was 50 mΩcm2, which was still high. Therefore, a Ti/W layer was used as an ion implantation mask so as to decrease the thickness of the mask and to improve an accuracy of the device process. A RESURF JFET with the gate length (LG) of 3.0 μm was fabricated, and the specific on-resistance of 6.3 mΩcm2 was obtained. In this paper, the fabrication process and the electrical characteristics of the device are described.

Fabrication of Semiconductor Nanostructures With an Atomic Force Microscope

1995 ◽  
Vol 380 ◽  
Author(s):  
E. S. Snow ◽  
P. M. Campbell
Keyword(s):  
Electric Field ◽  
Atomic Force Microscope ◽  
Semiconductor Nanostructures ◽  
Selective Etching ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Local Electric Field ◽  
Nanometer Scale ◽  
Atomic Force ◽  
Resolution Limits

ABSTRACTAn AFM-based nanolithography process is described. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resulting oxide, ∼ 3 nm thick, is used as a mask for selective etching of the unoxidized regions of Si. This AFM-based fabrication process is fast, reliable, simple to perform and is well suited for device fabrication. We apply this technique to the fabrication of Si and GaAs nanostructures, as well as to the fabrication of a nanometer-scale Si side-gated transistor. In addition, we discuss the ultimate resolution limits of the technique.

scholarly journals Direct activation of the Mauthner cell by electric field pulses drives ultrarapid escape responses

2014 ◽  
Vol 112 (4) ◽  
pp. 834-844 ◽  
Author(s):  
Kathryn M. Tabor ◽  
Sadie A. Bergeron ◽  
Eric J. Horstick ◽  
Diana C. Jordan ◽  
Vilma Aho ◽  
...  
Keyword(s):  
Electric Field ◽  
Sodium Channel ◽  
Cell Activity ◽  
Sensory Cells ◽  
Voltage Gated Sodium Channel ◽  
Reticulospinal Neurons ◽  
Mauthner Cell ◽  
Voltage Gated ◽  
Direct Activation ◽  
Escape Responses

Rapid escape swims in fish are initiated by the Mauthner cells, giant reticulospinal neurons with unique specializations for swift responses. The Mauthner cells directly activate motoneurons and facilitate predator detection by integrating acoustic, mechanosensory, and visual stimuli. In addition, larval fish show well-coordinated escape responses when exposed to electric field pulses (EFPs). Sensitization of the Mauthner cell by genetic overexpression of the voltage-gated sodium channel SCN5 increased EFP responsiveness, whereas Mauthner ablation with an engineered variant of nitroreductase with increased activity (epNTR) eliminated the response. The reaction time to EFPs is extremely short, with many responses initiated within 2 ms of the EFP. Large neurons, such as Mauthner cells, show heightened sensitivity to extracellular voltage gradients. We therefore tested whether the rapid response to EFPs was due to direct activation of the Mauthner cells, bypassing delays imposed by stimulus detection and transmission by sensory cells. Consistent with this, calcium imaging indicated that EFPs robustly activated the Mauthner cell but only rarely fired other reticulospinal neurons. Further supporting this idea, pharmacological blockade of synaptic transmission in zebrafish did not affect Mauthner cell activity in response to EFPs. Moreover, Mauthner cells transgenically expressing a tetrodotoxin (TTX)-resistant voltage-gated sodium channel retained responses to EFPs despite TTX suppression of action potentials in the rest of the brain. We propose that EFPs directly activate Mauthner cells because of their large size, thereby driving ultrarapid escape responses in fish.

scholarly journals Expression of voltage-gated calcium channels augments cell susceptibility to membrane disruption by nanosecond pulsed electric field

2018 ◽  
Vol 1860 (11) ◽  
pp. 2175-2183 ◽  
Author(s):  
Kiril Hristov ◽  
Uma Mangalanathan ◽  
Maura Casciola ◽  
Olga N. Pakhomova ◽  
Andrei G. Pakhomov
Keyword(s):  
Calcium Channels ◽  
Electric Field ◽  
Pulsed Electric Field ◽  
Membrane Disruption ◽  
Voltage Gated ◽  
Voltage Gated Calcium Channels ◽  
Nanosecond Pulsed Electric Field

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

2020 ◽  
Vol 1014 ◽  
pp. 62-67
Author(s):  
Xi Wang ◽  
Hong Bin Pu ◽  
Ji Chao Hu ◽  
Bing Liu
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Numerical Simulations ◽  
Schottky Diode ◽  
Doping Concentration ◽  
Fabrication Process ◽  
Drift Region ◽  
Reverse Blocking ◽  
Static Performance ◽  
Peak Electric Field

A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped drift region with no degradation of its reverse blocking characteristic. In comparison with the conventional SiC trenched junction barrier schottky (TJBS) diode, the proposed SiC SSTJBS diode shows a larger design window of drift region doping concentration from 7.9×1015cm-3 to 9.5×1015cm-3. In the design window, the specific on-resistance and surface peak electric field can be reduced by 12.9% and 11%, respectively.

A new fabrication process for the SOI-based miniature electric field sensor

2013 ◽  
Vol 34 (8) ◽  
pp. 086005
Author(s):  
Wei Liu ◽  
Pengfei Yang ◽  
Chunrong Peng ◽  
Dongming Fang ◽  
Shanhong Xia
Keyword(s):  
Electric Field ◽  
Fabrication Process ◽  
Electric Field Sensor ◽  
Field Sensor

Design Optimization of 1.2kV 4H-SiC Trench MOSFET

2019 ◽  
Vol 963 ◽  
pp. 605-608
Author(s):  
Tian Dai ◽  
Peter M. Gammon ◽  
Vishal Ajit Shah ◽  
Xiao Deng ◽  
Michael R. Jennings ◽  
...  
Keyword(s):  
Electric Field ◽  
Design Optimization ◽  
Gate Oxide ◽  
High Electric Field ◽  
Fabrication Process ◽  
Experimental Results ◽  
Base Region ◽  
Field Stress

In a trench MOSFET structure, p+ trench bottom implant (also called p+ shielding region) is commonly used to protect the gate oxide from high electric field stress, however, if the design and fabrication process are not optimized properly, the p+ shielding region together with n-drift and the p-base region will form a parasitic JFET which severely degrades the on-state performance of the device. This paper presents this parasitic JFET effect with experimental results and the optimization work that has been done to eliminate the parasitic JFET.

A Cell-Sparing Electric Field Stimulation Technique for High-Throughput Screening of Voltage-Gated Ion Channels

2006 ◽  
Vol 4 (1) ◽  
pp. 21-35 ◽  
Author(s):  
Randal M. Bugianesi ◽  
Paul R. Augustine ◽  
Karim Azer ◽  
Claude Dufresne ◽  
James Herrington ◽  
...  
Keyword(s):  
Ion Channels ◽  
Electric Field ◽  
High Throughput ◽  
High Throughput Screening ◽  
Field Stimulation ◽  
Electric Field Stimulation ◽  
Voltage Gated ◽  
A Cell ◽  
Voltage Gated Ion Channels ◽  
Stimulation Technique
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