Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask
2006 ◽
Vol 527-529
◽
pp. 1203-1206
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Keyword(s):
We fabricated 4H-SiC lateral JFETs with a reduced surface field (RESURF) structure, which can prevent the concentration of electric field at the edge of the gate metal [1]. Previously, we reported on the 4H-SiC RESURF JFET with a gate length (LG) of 10 μm [2]. Its specific on-resistance was 50 mΩcm2, which was still high. Therefore, a Ti/W layer was used as an ion implantation mask so as to decrease the thickness of the mask and to improve an accuracy of the device process. A RESURF JFET with the gate length (LG) of 3.0 μm was fabricated, and the specific on-resistance of 6.3 mΩcm2 was obtained. In this paper, the fabrication process and the electrical characteristics of the device are described.
2008 ◽
Vol 47
(7)
◽
pp. 5409-5416
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Keyword(s):
Keyword(s):
2019 ◽
Vol 8
(12S2)
◽
pp. 61-66
2012 ◽
Vol 51
◽
pp. 04DP04
◽
Keyword(s):