Examination of the impingement of interface trap charges on heterogeneous gate dielectric dual material control gate tunnel field effect transistor for the refinement of device reliability

2018 ◽  
Vol 13 (8) ◽  
pp. 1192-1196
Author(s):  
Sarthak Gupta ◽  
Dheeraj Sharma ◽  
Deepak Soni ◽  
Shivendra Yadav ◽  
Mohd. Aslam ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Interface Trap ◽  
Material Control ◽  
Device Reliability ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Dual Material ◽  
Trap Charges

scholarly journals Analysis of interface trap charges on performance variation in L‐shaped tunnel field‐effect transistor

2019 ◽  
Vol 14 (11) ◽  
pp. 1140-1145 ◽  
Author(s):  
Jia‐Min Guo ◽  
Cong Li ◽  
Zhi‐Rui Yan ◽  
Hao‐Feng Jiang ◽  
Yi‐Qi Zhuang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Interface Trap ◽  
Performance Variation ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Trap Charges

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

Sign in / Sign up

Export Citation Format

Share Document