Crystalline thin films for integrated laser applications

2020 ◽  
pp. 129-160
Keyword(s):  
Thin Films ◽  
Laser Applications

Latest Developments of Bulk Crystals and Thin Films of Rare-Earth Doped CaF2 for Laser Applications

ChemInform ◽  
2007 ◽  
Vol 38 (26) ◽  
Author(s):  
J. L. Doualan ◽  
P. Camy ◽  
R. Moncorge ◽  
E. Daran ◽  
M. Couchaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Bulk Crystals ◽  
Laser Applications ◽  
Rare Earth Doped

Excimer Laser Applications: Polymer Etching and Metal Deposition

1986 ◽  
Vol 75 ◽  
Author(s):  
Michael Ritz ◽  
V. Srinivasan ◽  
S. V. Babu ◽  
Ramesh C. Patel
Keyword(s):  
Thin Films ◽  
Laser Radiation ◽  
Excimer Laser ◽  
Laser Pulses ◽  
Metal Deposition ◽  
Laser Applications ◽  
Preliminary Results ◽  
Copper Particles ◽  
Copper Formate ◽  
High Fluences

AbstractExcimer laser induced ablative decomposition of polyimide and poly(methylmethacrylate) at high fluences (> 1 J/cm2) is discussed. It is shown that 0.4 μm sized features can be imaged in polyimide using ArF laser pulses. Preliminary results from experiments in which copper particles (<1 μm in size) have been deposited by exposing thin films of a copper formate and glycerol paste to KrF laser radiation are presented.

Effect of Thermal Treatments on the Structural and Optical Properties of Thermally Deposited Polycrystalline Cu Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 335-342
Author(s):  
S.K. Mehmood ◽  
M. Mansoor ◽  
M.M. Asim ◽  
S. Zaman
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Crystallite Size ◽  
Residual Strain ◽  
Infrared Region ◽  
Laser Applications ◽  
Crystallographic Preferred Orientation ◽  
Double Beam ◽  
Crystallite Sizes

Copper thin films are potentially used in optical and laser applications due to their intrinsic reflective indexes in visible and infrared region of the spectrum. The reflective properties of the thin films are mainly driven by their thickness, structure, and residual strain induced during the processing stages. Copper thin films of various thicknesses were deposited on glass slides using a thermal evaporation unit. The deposited substrates were thermally treated, in inert environment for 30 minutes, for various temperatures. Further, the substrates were characterized using various techniques. Structural studies of the thin films were carried out using XRD on the as deposited and heat treated films to study the phases, the crystallographic preferred orientation, residual strain and crystallite size. The polycrystalline Cu phase was revealed and no oxide phases were identified. The films were preferentially oriented along (111). The crystallite size increases while the residual strain decreases as the film thickness increases. The crystallite sizes were very small as compared to the film thickness. The optical properties of these coatings were investigated by double beam spectrophotometer. It was found that reflectance of these coatings strongly depends upon the film thickness and post deposition heat treatment. The optimum deposition procedure was established to obtain the enhanced reflecting power.

scholarly journals Nonlinear Optical Response of Reflective MXene Molybdenum Carbide Films as Saturable Absorbers

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2391
Author(s):  
Jiang Wang ◽  
Yonggang Wang ◽  
Sicong Liu ◽  
Guangying Li ◽  
Guodong Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molybdenum Carbide ◽  
Modulation Depth ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Average Output ◽  
Laser Applications ◽  
Short Pulses ◽  
Saturable Absorbers ◽  
Silver Mirror

Molybdenum carbide (Mo2C) is a two-dimensional (2D) MXene material which makes it a promising photoelectric material. In this study, reflective type MXene Mo2C thin films were coated on a silver mirror by a magnetron sputtering method and were subsequently used in a passively Q-switched solid-state pulsed laser generator at the central wavelengths of 1.06 and 1.34 μm, respectively. The fabricated thin films of reflective type MXene Mo2C exhibited large modulation depth of 6.86% and 5.38% at the central wavelengths of 1064 and 1342 nm, respectively. By inserting the Mo2C saturable absorbers (SAs) into V-shaped Nd:YAG laser, short pulses were generated having a pulse duration, pulse energy, and average output power of 254 ns, 2.96 μJ, and 275 mW, respectively, at a wavelength of 1.06 μm. Similarly, shorter laser pulses were obtained in Nd:YVO4 laser at 1.34 μm. Our results illustrated potential of the 2D MXene Mo2C films for laser applications.

Latest developments of bulk crystals and thin films of rare-earth doped CaF2 for laser applications

2007 ◽  
Vol 128 (4) ◽  
pp. 459-464 ◽  
Author(s):  
J.L. Doualan ◽  
P. Camy ◽  
R. Moncorgé ◽  
E. Daran ◽  
M. Couchaud ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Bulk Crystals ◽  
Laser Applications ◽  
Rare Earth Doped

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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