A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor

1984 ◽  
Vol 33 ◽  
Author(s):  
Z. Yaniv ◽  
G. Hansell ◽  
M. Vijan ◽  
V. Cannella
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Liquid Crystal Displays ◽  
Channel Length ◽  
Large Area ◽  
Short Channel ◽  
Threshold Voltages ◽  
Effect Transistor ◽  
Si Thin Film

ABSTRACTA new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.

scholarly journals Impact of device scaling on the electrical properties of MoS2 field-effect transistors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Goutham Arutchelvan ◽  
Quentin Smets ◽  
Devin Verreck ◽  
Zubair Ahmed ◽  
Abhinav Gaur ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Channel Length ◽  
Contact Length ◽  
Power Performance ◽  
Semiconducting Materials ◽  
Large Area ◽  
Short Channel ◽  
Device Scaling ◽  
Performance Area

AbstractTwo-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

scholarly journals Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15312-15321
Author(s):  
Davide Blasi ◽  
Fabrizio Viola ◽  
Francesco Modena ◽  
Axel Luukkonen ◽  
Eleonora Macchia ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Cost Effective ◽  
Continuous Operation ◽  
Large Area ◽  
Ink Jet ◽  
Effect Transistor

A large-area processable ink-jet-printed poly(3-hexylthiophene) electrolyte-gated field-effect transistor, designed for bioelectronic applications, is proven to be stable for one week of continuous operation.

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

scholarly journals Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT

2020 ◽  
Author(s):  
Silpa S. Prasad ◽  
Divya G ◽  
Sindhu S ◽  
Shreekrishna Kumar K
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Xrd Pattern ◽  
Humidity Sensing ◽  
Morphological Studies ◽  
Sensing Applications ◽  
Crystalline Nature ◽  
Effect Transistor

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

Organic thin-film transistors of phthalocyanines

2008 ◽  
Vol 80 (11) ◽  
pp. 2231-2240 ◽  
Author(s):  
Liqiang Li ◽  
Qingxin Tang ◽  
Hongxiang Li ◽  
Wenping Hu ◽  
Xiaodi Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Packing ◽  
Organic Thin Film Transistors ◽  
Semiconductor Materials ◽  
Organic Thin Film ◽  
Future Prospects ◽  
Large Area ◽  
Packing Structure

Organic thin-film field-effect transistors (OTFTs) are emerging as attractive candidates for low-price, large-area, and flexible circuit applications. A variety of organic compounds have been utilized as active semiconductor materials for OTFTs, among which phthalocyanine compounds have attracted considerable attention owing to their remarkable chemical and thermal stability as well as good field-effect performance. Here, we review recent results on the phthalocyanine-based OTFTs. The correlation between the crystal packing structure and the charge transport property is discussed, and we conclude with a description of the future prospects for phthalocyanine-based OTFTs.

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