Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1522-1524 ◽  
Author(s):  
Mitsuhiro Shigeta ◽  
Yoshihisa Fujii ◽  
Katsuki Furukawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...


2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Chaocheng Wang ◽  
Wei Chen ◽  
Cheng Han ◽  
Guang Wang ◽  
Binbing Tang ◽  
...  

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura

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