scholarly journals Growth and characterization of ultrahigh vacuum/chemical vapor deposition SiGe epitaxial layers on bulk single-crystal SiGe and Si substrates

2002 ◽  
Vol 20 (3) ◽  
pp. 1120-1124 ◽  
Author(s):  
S. R. Sheng ◽  
M. Dion ◽  
S. P. McAlister ◽  
N. L. Rowell
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
Bulk Single Crystal ◽  
Si Substrates

Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1522-1524 ◽  
Author(s):  
Mitsuhiro Shigeta ◽  
Yoshihisa Fujii ◽  
Katsuki Furukawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Single Crystal Films ◽  
Crystal Films

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition

1994 ◽  
Vol 76 (8) ◽  
pp. 4921-4923 ◽  
Author(s):  
T. G. Jung ◽  
C. Y. Chang ◽  
C. S. Liu ◽  
T. C. Chang ◽  
H. C. Lin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Heterojunction Diode
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