Finite element analysis of stress relaxation in thin foil plan‐view transmission electron microscopy specimens

1993 ◽  
Vol 63 (16) ◽  
pp. 2291-2293 ◽  
Author(s):  
R. Hull
Keyword(s):  
Electron Microscopy ◽  
Finite Element Analysis ◽  
Transmission Electron Microscopy ◽  
Finite Element ◽  
Stress Relaxation ◽  
Thin Foil ◽  
Element Analysis ◽  
Plan View ◽  
Transmission Electron

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Structural Investigation ◽  
Amorphous Material ◽  
Porous Si ◽  
Plan View ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

Axisymmetric Finite Element Analysis of a Debonded Total Hip Stem With an Unsupported Distal Tip

1996 ◽  
Vol 118 (3) ◽  
pp. 399-404 ◽  
Author(s):  
T. L Norman ◽  
V. C. Saligrama ◽  
K. T. Hustosky ◽  
T. A. Gruen ◽  
J. D. Blaha
Keyword(s):  
Finite Element Analysis ◽  
Finite Element ◽  
Stress Relaxation ◽  
Bone Cement ◽  
Cement Mantle ◽  
Load Level ◽  
Interface Conditions ◽  
Element Analysis ◽  
Cement Interface ◽  
Total Hip

A tapered femoral total hip stem with a debonded stem-cement interface and an unsupported distal tip subjected to constant axial load was evaluated using two-dimensional (2D) axisymmetric finite element analysis. The analysis was performed to test if the mechanical condition suggest that a “taper-lock” with a debonded viscoelastic bone cement might be an alternative approach to cement fixation of stem type cemented hip prosthesis. Effect of stem-cement interface conditions (bonded, debonded with and without friction) and viscoelastic response (creep and relaxation) of acrylic bone cement on cement mantle stresses and axial displacement of the stem was also investigated. Stem debonding with friction increased maximum cement von Mises stress by approximately 50 percent when compared to the bonded stem. Of the stress components in the cement mantle, radial stresses were compressive and hoop stresses were tensile and were indicative of mechanical taper-lock. Cement mantle stress, creep and stress relaxation and stem displacement increased with increasing load level and with decreasing stem-cement interface friction. Stress relaxation occur predominately in tensile hoop stress and decreased from 1 to 46 percent over the conditions considered. Stem displacement due to cement mantle creep ranged from 614 μm to 1.3 μm in 24 hours depending upon interface conditions and load level.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Stress Relaxation Behavior of GH4169 Alloy

2020 ◽  
Vol 1013 ◽  
pp. 52-58
Author(s):  
Xu Dong Lu ◽  
Song Yi Shi ◽  
Bo Wen ◽  
Ya Wei Zhang ◽  
Jin Hui Du
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stress Relaxation ◽  
Initial Stress ◽  
Relaxation Behavior ◽  
Stress Relaxation Behavior ◽  
Transmission Electron ◽  
Microscopy Techniques ◽  
The Relationship ◽  
Gh4169 Alloy

The relaxation properties of GH4169 alloy were studied contrastively at temperatures ranging from 600 oC to 700 °C and initial stress ranging from 550 MPa to 850 MPa. The relationship between the microstructure and relaxation behavior was evaluated using transmission electron microscopy techniques. It was found that the relaxation limit and relaxation stability of the alloy decreased obviously with the increase of temperature. Further investigations show that the relaxation behavior is mainly depend on both precipitate characteristics and its interaction with dislocations. The alloy with higher strength lever has more excellent stress relaxation stability, because of the inhibition of a large number subgrains on dislocations motion.

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

2004 ◽  
Vol 10 (1) ◽  
pp. 134-138 ◽  
Author(s):  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
Miyoko Tanaka ◽  
Kazuo Furuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Plan View ◽  
Palladium Clusters ◽  
Transmission Electron ◽  
Pd Clusters

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

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