High‐optical‐quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas‐source molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4557-4559 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Katsumi Kishino ◽  
Yawara Kaneko
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality ◽  
Double Heterostructure ◽  
Gas Source ◽  
Gaas Substrates

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

2008 ◽  
Vol 1 ◽  
pp. 091202 ◽  
Author(s):  
Yoshio Nishimoto ◽  
Ken Nakahara ◽  
Daiju Takamizu ◽  
Atsushi Sasaki ◽  
Kentaro Tamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1168-1170 ◽  
Author(s):  
Hui-Jae Lee ◽  
Kenta Konishi ◽  
Osamu Maeda ◽  
Akiko Mizobata ◽  
Kumiko Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Gas Source

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Agam Prakash Vajpeyi ◽  
G. Tsiakatouras ◽  
A Adikimenakis ◽  
K. Tsagaraki ◽  
M Androulidaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Surface ◽  
Thermal Strain ◽  
Average Diameter ◽  
Optical Quality ◽  
Average Height ◽  
High Optical Quality ◽  
Mismatch Strain

ABSTRACTThe spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 6A) ◽  
pp. L665-L667 ◽  
Author(s):  
Masahiro Fushida ◽  
Hajime Asahi ◽  
Kazuhiko Yamamoto ◽  
Hideki Koh ◽  
Kumiko Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Gaas Substrates

Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by molecular beam epitaxy

1983 ◽  
Vol 61 (2) ◽  
pp. 393-396 ◽  
Author(s):  
T. Fujii ◽  
S. Hiyamizu ◽  
O. Wada ◽  
T. Sugahara ◽  
S. Yamakoshi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1016-1018 ◽  
Author(s):  
Hui-Jae Lee ◽  
Akiko Mizobata ◽  
Osamu Maeda ◽  
Kenta Konishi ◽  
Kumiko Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gas Source ◽  
Gaas Substrates
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