A slab‐shaped electron cyclotron resonance ion beam source for in‐line running target treatments

1996 ◽  
Vol 67 (3) ◽  
pp. 1000-1002 ◽  
Author(s):  
V. Roy ◽  
L. Wartski ◽  
F. Boukari ◽  
A. Momy ◽  
C. Schwebel ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Beam Source

Production of a highly charged uranium ion beam with RIKEN superconducting electron cyclotron resonance ion source

2012 ◽  
Vol 83 (2) ◽  
pp. 02A333 ◽  
Author(s):  
Y. Higurashi ◽  
J. Ohnishi ◽  
T. Nakagawa ◽  
H. Haba ◽  
M. Tamura ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Uranium Ion

Preparation of Aluminum Nitride Epitaxial Films by Electron Cyclotron Resonance Dual-Ion-Beam Sputtering

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5249-5254 ◽  
Author(s):  
Naoki Tanaka ◽  
Hiroshi Okano ◽  
Tatsuro Usuki ◽  
Kenichi Shibata
Keyword(s):  
Aluminum Nitride ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Electron Cyclotron ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Hydrogen in Dielectric Film Formation From an Electron Cyclotron Resonance Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Irradiation ◽  
Film Formation ◽  
Ion Beam ◽  
Electron Cyclotron ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
The Stability

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.

Ion beam capture and charge breeding in electron cyclotron resonance ion source plasmas

2007 ◽  
Vol 78 (10) ◽  
pp. 103503 ◽  
Author(s):  
Jin-Soo Kim ◽  
L. Zhao ◽  
B. P. Cluggish ◽  
Richard Pardo
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Ion Source ◽  
Electron Cyclotron ◽  
Charge Breeding

scholarly journals ECR plasma source for heavy ion beam charge neutralization

2003 ◽  
Vol 21 (1) ◽  
pp. 37-40 ◽  
Author(s):  
PHILIP C. EFTHIMION ◽  
ERIK GILSON ◽  
LARRY GRISHAM ◽  
PAVEL KOLCHIN ◽  
RONALD C. DAVIDSON ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Low Pressure ◽  
Heavy Ion ◽  
Electron Cyclotron ◽  
Wave Damping ◽  
Charge Neutralization ◽  
Ecr Plasma ◽  
Ecr Source

Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1–100 times the ion beam density and at a length ∼0.1–2 m would be suitable for achieving a high level of charge neutralization. An Electron Cyclotron Resonance (ECR) source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1–10 gauss. The goal is to operate the source at pressures ∼10−6 Torr at full ionization. The initial operation of the source has been at pressures of 10−4–10−1 Torr. Electron densities in the range of 108 to 1011 cm−3 have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source. This article also describes the wave damping mechanisms. At moderate pressures (> 1 mTorr), the wave damping is collisional, and at low pressures (< 1 mTorr) there is a distinct electron cyclotron resonance.

Optimization of Electron Cyclotron Resonance Reactive Ion Beam Etching Reactors for Dry Etching of GaAs with Cl2

1997 ◽  
Vol 144 (9) ◽  
pp. 3191-3197 ◽  
Author(s):  
K. Nishioka ◽  
M. Sugiyama ◽  
M. Nezuka ◽  
Y Shimogaki ◽  
Y. Nakano ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Dry Etching ◽  
Electron Cyclotron ◽  
Ion Beam Etching ◽  
Reactive Ion Beam Etching
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