Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

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Femtosecond Rotational Raman Coherence Spectroscopy of Cyclohexane in a Pulsed Supersonic Jet

The Journal of Physical Chemistry A ◽

10.1021/jp207290g ◽

2011 ◽

Vol 115 (44) ◽

pp. 12380-12389 ◽

Cited By ~ 10

Author(s):

Georges Brügger ◽

Hans-Martin Frey ◽

Patrick Steinegger ◽

Philipp Kowalewski ◽

Samuel Leutwyler

Keyword(s):

Supersonic Jet ◽

Coherence Spectroscopy ◽

Pulsed Supersonic Jet

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(2 + 1) Resonance enhanced multiphoton ionization of hydrogen chloride in a pulsed supersonic jet: Vacuum wavenumbers of rotational lines with detailed band analysis for excited electronic states of H35Cl1

Journal of Molecular Spectroscopy ◽

10.1016/0022-2852(91)90240-b ◽

1991 ◽

Vol 150 (2) ◽

pp. 388-469 ◽

Cited By ~ 61

Author(s):

David S. Green ◽

Grant A. Bickel ◽

Stephen C. Wallace

Keyword(s):

Hydrogen Chloride ◽

Multiphoton Ionization ◽

Supersonic Jet ◽

Electronic States ◽

Excited Electronic States ◽

Pulsed Supersonic Jet

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Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

Solid-State Electronics ◽

10.1016/s0038-1101(98)00233-0 ◽

1998 ◽

Vol 42 (12) ◽

pp. 2321-2327 ◽

Cited By ~ 8

Author(s):

S.A. Ustin ◽

C. Long ◽

W. Ho

Keyword(s):

Silicon Carbide ◽

Supersonic Jet ◽

Supersonic Jet Epitaxy

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Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Thin Solid Films ◽

10.1016/s0040-6090(98)00351-4 ◽

1998 ◽

Vol 324 (1-2) ◽

pp. 124-128 ◽

Cited By ~ 6

Author(s):

Jin-Hyo Boo ◽

S.A Ustin ◽

W Ho

Keyword(s):

Thin Films ◽

Supersonic Jet ◽

Single Crystalline ◽

Si Substrates ◽

Supersonic Jet Epitaxy

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Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

MRS Proceedings ◽

10.1557/proc-395-301 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 1

Author(s):

Peter E. Norris ◽

Long D. Zhu ◽

H. Paul Maruska ◽

Wilson HO ◽

Scott Ustin ◽

...

Keyword(s):

Buffer Layer ◽

Microwave Plasma ◽

Supersonic Jet ◽

Plasma Source ◽

Improved Method ◽

High Quality ◽

Carrier Gas ◽

Sapphire Substrates ◽

Supersonic Jet Epitaxy ◽

Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

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