Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

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Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Scientific Reports ◽

10.1038/s41598-021-91848-2 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Phu T. P. Le ◽

Johan E. ten Elshof ◽

Gertjan Koster

Keyword(s):

Thin Films ◽

Sacrificial Layer ◽

Two Dimensional ◽

Single Crystalline ◽

Si Substrates ◽

Crystalline Oxide ◽

Sacrificial Layers ◽

Lift Off ◽

Oxide Perovskite

AbstractTwo-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers were realized on SrTiO3(011) and SrTiO3(111), respectively. Subsequently, SrRuO3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO3(011)pc and SrRuO3(111)pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

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An apparatus for supersonic jet epitaxy of thin films

Review of Scientific Instruments ◽

10.1063/1.1150484 ◽

2000 ◽

Vol 71 (3) ◽

pp. 1479-1487 ◽

Cited By ~ 2

Author(s):

S. A. Ustin ◽

K. A. Brown ◽

W. Ho

Keyword(s):

Thin Films ◽

Supersonic Jet ◽

Supersonic Jet Epitaxy

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Interactions Between Al and Cr Thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100093158 ◽

1976 ◽

Vol 34 ◽

pp. 638-639

Author(s):

R. M. Anderson ◽

T. M. Reith ◽

M. J. Sullivan ◽

E. K. Brandis

Keyword(s):

Thin Films ◽

Room Temperature ◽

Vacuum System ◽

Processing Temperature ◽

Diffusion Couples ◽

Electronic Circuits ◽

Intermetallic Formation ◽

Si Substrates ◽

Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

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Defects in β-SiC thin films grown on α-SiC substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010490x ◽

1988 ◽

Vol 46 ◽

pp. 568-569

Author(s):

Karren L. More

Keyword(s):

Thin Films ◽

Semiconductor Device ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Substrate Material ◽

Growth Interface ◽

Si Substrates ◽

Thermal Expansion Coefficients ◽

Device Applications ◽

Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

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Interface motion during recrystallization of amorphous NiSi2

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100175752 ◽

1990 ◽

Vol 48 (4) ◽

pp. 524-525

Author(s):

J. L. Batstone ◽

D.A. Smith

Keyword(s):

Thin Films ◽

Room Temperature ◽

Amorphous Film ◽

Nucleation And Growth ◽

Recrystallization Process ◽

Amorphous Films ◽

Interface Motion ◽

Si Substrates ◽

Spherical Caps ◽

Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

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Fabrication and Evaluation of SiO2 Thin Films on Si Substrates by Microwave Plasma in Various Conditions

IEEJ Transactions on Fundamentals and Materials ◽

10.1541/ieejfms.140.186 ◽

2020 ◽

Vol 140 (4) ◽

pp. 186-192

Author(s):

Shumpei Ogawa ◽

Tatsuya Kuroda ◽

Yasuyuki Katou ◽

Hironori Haga ◽

Hiroki Ishizaki

Keyword(s):

Thin Films ◽

Microwave Plasma ◽

Si Substrates

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Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

MRS Proceedings ◽

10.1557/proc-762-a17.13 ◽

2003 ◽

Vol 762 ◽

Author(s):

Hwang Huh ◽

Jung H. Shin

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

High Resolution ◽

Amorphous Silicon ◽

Tem Analysis ◽

Contact Printing ◽

Single Crystalline ◽

High Resolution Tem ◽

Lateral Crystallization ◽

Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽

10.3390/coatings11010023 ◽

2020 ◽

Vol 11 (1) ◽

pp. 23

Author(s):

Weiguang Zhang ◽

Jijun Li ◽

Yongming Xing ◽

Xiaomeng Nie ◽

Fengchao Lang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Integrated Circuits ◽

Film Thickness ◽

Depth Range ◽

Micro Electro Mechanical Systems ◽

Si Substrates ◽

Sio2 Thin Film ◽

Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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