Supersonic jet epitaxy of III-nitride semiconductors

ABSTRACTAlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1–20 mTorr. Triethylaluminum, triethylgailium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Download Full-text

Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth

Applied Physics Letters ◽

10.1063/1.115809 ◽

1996 ◽

Vol 68 (22) ◽

pp. 3156-3158 ◽

Cited By ~ 11

Author(s):

Rajeev Malik ◽

Erdogan Gulari

Keyword(s):

Supersonic Jet ◽

Silicon Growth ◽

Supersonic Jet Epitaxy ◽

Pulsed Supersonic Jet

Download Full-text

Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

Solid-State Electronics ◽

10.1016/s0038-1101(98)00233-0 ◽

1998 ◽

Vol 42 (12) ◽

pp. 2321-2327 ◽

Cited By ~ 8

Author(s):

S.A. Ustin ◽

C. Long ◽

W. Ho

Keyword(s):

Silicon Carbide ◽

Supersonic Jet ◽

Supersonic Jet Epitaxy

Download Full-text

Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Thin Solid Films ◽

10.1016/s0040-6090(98)00351-4 ◽

1998 ◽

Vol 324 (1-2) ◽

pp. 124-128 ◽

Cited By ~ 6

Author(s):

Jin-Hyo Boo ◽

S.A Ustin ◽

W Ho

Keyword(s):

Thin Films ◽

Supersonic Jet ◽

Single Crystalline ◽

Si Substrates ◽

Supersonic Jet Epitaxy

Download Full-text

Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

MRS Proceedings ◽

10.1557/proc-395-301 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 1

Author(s):

Peter E. Norris ◽

Long D. Zhu ◽

H. Paul Maruska ◽

Wilson HO ◽

Scott Ustin ◽

...

Keyword(s):

Buffer Layer ◽

Microwave Plasma ◽

Supersonic Jet ◽

Plasma Source ◽

Improved Method ◽

High Quality ◽

Carrier Gas ◽

Sapphire Substrates ◽

Supersonic Jet Epitaxy ◽

Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

Download Full-text

Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy

Journal of Applied Physics ◽

10.1063/1.1785869 ◽

2004 ◽

Vol 96 (8) ◽

pp. 4556-4562 ◽

Cited By ~ 2

Author(s):

Nicholas A. Smith ◽

H. Henry Lamb ◽

Arthur J. McGinnis ◽

Robert F. Davis

Keyword(s):

Surface Roughness ◽

Supersonic Jet ◽

Homoepitaxial Growth ◽

Supersonic Jet Epitaxy

Download Full-text

Single Crystal Gallium Nitride on Silicon Using SiC as an Intermediate Layer

MRS Proceedings ◽

10.1557/proc-482-313 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 3

Author(s):

S. A. Ustin ◽

W. Ho

Keyword(s):

Supersonic Jet ◽

Growth Conditions ◽

X Ray Diffraction ◽

Cross Sectional ◽

Rocking Curve ◽

Intermediate Layers ◽

Transmission Electron ◽

Single Source Precursor ◽

Supersonic Jet Epitaxy

AbstractGaN films have been grown atop SiC intermediate layers on Si(001) and Si(111) substrates using supersonic jet epitaxy (SJE). GaN growth temperatures ranged between 600 °C and 775 °C. Methylsilane (H3SiCH3) was used as the single source precursor for SiC growth and triethylgallium (TEG) and ammonia (NH 3) were the sources for GaN epitaxy. The GaN growth rate was found to depend strongly on substrate orientation, growth temperature, and flux. Structural characterization of the films was done by transmission electron diffraction (TED) and x-ray diffraction (XRD). Growth of GaN on SiC(002) produces a cubic or mixed phase of cubic and wurtzite depending on growth conditions. Growth on SiC(111) produces predominantly wurtzite GaN(0002). Minimum rocking curve widths for GaN(0002) on SiC/Si(111) and GaN(002) on SiC/Si(001) are 0.6° and 1.5°, respectively. Cross Sectional Transmission Electron Microscopy (XTEM) was also performed.

Download Full-text

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

MRS Proceedings ◽

10.1557/proc-441-705 ◽

1996 ◽

Vol 441 ◽

Cited By ~ 2

Author(s):

Jin-Hyo Boo ◽

Scott A. Ustin ◽

Wilson Ho ◽

H. Paul Maruska ◽

Peter E. Norris ◽

...

Keyword(s):

Thin Films ◽

Film Growth ◽

Supersonic Jet ◽

Silicon On Insulator ◽

X Ray Diffraction ◽

Molecular Precursors ◽

Transmission Electron ◽

Supersonic Jet Epitaxy ◽

Soi Substrates

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

Download Full-text