Low-energy grazing-angle argon-ion irradiation of silicon: A viable option for cleaning?

In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at 150?C. The thickness of TiN layers was ~240 nm. After deposition the samples were irradiated with 120 keV argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2. Structural characterization was performed with Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM), grazing angle X-ray diffraction (XRD) and atomic force microscopy (AFM). It was found that the argon ion irradiation induced the changes in the lattice constant, mean grain size, micro-strain and surface morphology of the TiN layers. The observed micro-structural changes are due to the formation of the high density damage region in the TiN thin film structure.

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Low energy argon ion irradiation effect on magnetic behavior of polycrystalline Cu substituted ZnO

Materials Today Proceedings ◽

10.1016/j.matpr.2020.03.030 ◽

2020 ◽

Author(s):

Shreenu Pattanaik ◽

Jyoshnarani Mohapatra ◽

Dilip Kumar Mishra ◽

Pravin Kumar ◽

D. Kanjilal

Keyword(s):

Ion Irradiation ◽

Magnetic Behavior ◽

Low Energy ◽

Irradiation Effect ◽

Argon Ion

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Effect of low energy argon ion irradiation on the secondary electron emission spectrum of highly oriented pyrolytic graphite

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(90)90492-d ◽

1990 ◽

Vol 51 (3) ◽

pp. 226-231 ◽

Cited By ~ 17

Author(s):

A. Hoffman ◽

P.J.K. Paterson ◽

S. Prawer

Keyword(s):

Emission Spectrum ◽

Electron Emission ◽

Secondary Electron ◽

Ion Irradiation ◽

Pyrolytic Graphite ◽

Secondary Electron Emission ◽

Low Energy ◽

Highly Oriented Pyrolytic Graphite ◽

Argon Ion

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Improvement and Evaluation of Metal Thin Films by Very Low Energy Argon Ion Irradiation

Microelectromechanical Systems ◽

10.1115/imece2004-60417 ◽

2004 ◽

Author(s):

Tomonori Sasaki ◽

Ming Yang ◽

Kinuko Fujimoto

Keyword(s):

Thin Film ◽

Thin Films ◽

Mechanical Properties ◽

Ion Irradiation ◽

Metal Films ◽

Low Energy ◽

Metal Thin Films ◽

Ion Plasma ◽

Integrated Intensity ◽

Argon Ion

A new methodology using very low energy Ar ion irradiation is proposed to improve the mechanical properties of thin metal films deposited by sputtering. In this study, accelerating voltage of Ar ion plasma was set to lower than 100V, and several conditions were applied to irradiations. Consequently, it is found that Young’s modulus and hardness of Aluminum and Nickel thin film increases about 10% by the irradiation compared with a non-irradiated thin film. (111)–oriented integrated intensity of diffraction of Al and Ni thin film was increased by the irradiation. It is considered that crystalline orientation was changed and column spacing of the film be filled by the irradiation. It is shown that the proposed technique is effective to improve the mechanical properties of metal thin films with proper irradiation conditions.

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