ABSTRACTIn this contribution, we study the increase in metalorganic-low pressure chemical vapor deposited (MO-LPCVD) ZnO thin films conductivity by hydrogen plasma post-treatment. We show that this improvement is linked to defect passivation at grain boundaries, decreasing the electron traps density and resulting in the almost complete suppression of the electron scattering at grain boundaries. For a 2 μm thick non-intentionally doped ZnO layer, electron mobility reaches after treatment values close to 60 cm2V-1s-1 (corresponding to an increase of 100%), with a carrier density still as low as 3 x1019 cm-3 (+1.5 x1019 cm-3). Such layers have an absorbance below 2-3% in the range of 400 to 1100 nm making them among the most transparent and conductive materials reported so far. In addition, we demonstrate that hydrogen plasma post-treated ZnO layers can be used as front electrode for producing highly transparent and conductive electrodes. Eventually, it is shown that hydrogen plasma treatment can also be used on the complete thin film solar cell stack (back contact and silicon device) to improve the cell performances.
Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride
