Correlation between cathode properties, burning voltage, and plasma parameters of vacuum arcs

2001 ◽  
Vol 89 (12) ◽  
pp. 7764-7771 ◽  
Author(s):  
André Anders ◽  
Banchob Yotsombat ◽  
Robert Binder
2021 ◽  
Vol 2064 (1) ◽  
pp. 012029
Author(s):  
I V Lopatin ◽  
Yu H Akhmadeev ◽  
S S Kovalsky ◽  
D Yu Ignatov

Abstract This paper presents the results of a study of an electron-ion-plasma alitization system using two arc plasma generators: a gas plasma generator based on a non-self-sustained arc discharge with a thermionic cathode “PINK” and a gas-metal plasma generator based on an arc discharge with a cathode spot. The system for discharges supplying and biasing of the samples assumes two sub-modes of operation: the ion cleaning sub-mode (ion sub-mode) and the sub-mode of samples electron heating (electron sub-mode), thus realizing the “elion” mode of the system operation. During the experiments, both the dependences of the average values of currents and voltages of discharges burning and probe measurements of the instantaneous plasma parameters values in both system operating sub-modes were investigated. It is shown, that the electron sub-mode of system operation is characterized by an increased burning voltage, which is caused by the formation of a positive anode drop of more than 10 V in the plasmas. Such a potential distribution in the discharges ensures effective heating of the samples by the discharges plasmas electron component.


Polymers ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 901
Author(s):  
Miklós Berczeli ◽  
Zoltán Weltsch

The development of bonding technology and coating technologies require the use of modern materials and topologies for the demanding effect and modification of their wetting properties. For the industry, a process modification process that can be integrated into a process is the atmospheric pressure of air operation plasma surface treatment. This can be classified and evaluated based on the wettability, which has a significant impact on the adhesive force. The aim is to improve the wetting properties and to find the relationship between plasma treatment parameters, wetting, and adhesion. High Impact PolyStyrene (HIPS) was used as an experimental material, and then the plasma treatment can be treated with various adjustable parameters. The effect of plasma parameters on surface roughness, wetting contact angle, and using Fowkes theory of the surface energy have been investigated. Seven different plasma jet treatment distances were tested, combined with 5 scan speeds. Samples with the best plasma parameters were prepared from 25 mm × 25 mm overlapping adhesive joints using acrylic/cyanoacrylate. The possibility of creating a completely hydrophilic surface was achieved, where the untreated wetting edge angle decreased from 88.2° to 0° for distilled water and from 62.7° to 0° in the case of ethylene glycol. The bonding strength of High Impact PolyStyrene was increased by plasma treatment by 297%.


Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.


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