Ion implantation range distributions in silicon carbide

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Applied Sciences ◽

10.3390/app10114013 ◽

2020 ◽

Vol 10 (11) ◽

pp. 4013

Author(s):

Priya Darshni Kaushik ◽

Gholam Reza Yazdi ◽

Garimella Bhaskara Venkata Subba Lakshmi ◽

Grzegorz Greczynski ◽

Rositsa Yakimova ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Photoelectron Spectroscopy ◽

High Performance ◽

Defect Density ◽

Epitaxial Graphene ◽

Monolayer Graphene ◽

Vacancy Defects ◽

Nitrogen Ion Implantation ◽

Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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Ion Implantation and Annealing Effects in Silicon Carbide

MRS Proceedings ◽

10.1557/proc-438-241 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 52

Author(s):

V. Heera ◽

W. Skorupa

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Ion Implantation ◽

High Power ◽

High Frequency ◽

Ion Beam ◽

Surface Erosion ◽

Annealing Effects ◽

Ion Ranges ◽

Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

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Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.411 ◽

2015 ◽

Vol 821-823 ◽

pp. 411-415

Author(s):

Konstantin Vassilevski ◽

Sandip K. Roy ◽

Neal Wood ◽

Alton B. Horsfall ◽

Nick G. Wright

Keyword(s):

Silicon Carbide ◽

Ion Implantation ◽

Contact Resistivity ◽

The Other ◽

Capping Layer ◽

Nitrogen Doped ◽

Channel Layer ◽

Heavily Doped ◽

Process Compatibility ◽

Post Implantation

Heavily doped layers were formed in 4H-SiC device epitaxial structures comprised of moderately doped n layer (channel) and heavily doped p+ layer (gate). The n+ regions were formed by local ion implantation of nitrogen followed by post-implantation annealing with graphite capping layer. It was shown that annealing at 1700 °C is required for complete activation of implanted impurities. The post-implantation anneals were found to have no significant effect on the moderately nitrogen doped channel layer. On the other hand it resulted in noticeable deterioration of electrical propertied of heavily doped epitaxial p+ layers leading to the increase of contact resistivity which has to be taken into account in design and processing of SiC devices.

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