Criticality Criteria for Various Configurations of a Self‐Heating Chemical as Functions of Activation Energy and Temperature of Assembly

1961 ◽  
Vol 34 (1) ◽  
pp. 46-50 ◽  
Author(s):  
John R. Parks
2016 ◽  
Vol 94 (5) ◽  
pp. 494-500 ◽  
Author(s):  
Xuyao Qi ◽  
Haibo Xue ◽  
Haihui Xin ◽  
Cunxiang Wei

Hydroxyl groups are one of the key factors for the development of coal self-heating, although their detailed reaction pathways are still unclear. This study investigated the reaction pathways in coal self-heating by the method of quantum chemistry calculation. The Ar–CH2–CH(CH3)–OH was selected as a typical structure unit for the calculation. The results indicate that the hydrogen atoms in hydroxyl groups and R3–CH are the active sites. For the hydrogen atoms in hydroxyl groups, they are directly abstracted by oxygen. For hydrogen atoms in R3–CH, they are abstracted by oxygen at first and generate peroxy-hydroxyl free radicals, which abstract the hydrogen atoms in hydroxyl groups later. The reaction of R3–CH contains three elementary reactions, i.e., the hydrogen abstraction of R3–CH by oxygen, the conjugation reaction between the R3C■ and oxygen atom, and the hydrogen abstraction of –OH by hydroxyl free radicals. Then, the microstructure parameters, IRC pathways, and reaction dynamic parameters were respectively analyzed for the four reactions. For the hydrogen abstraction of –OH by oxygen, the enthalpy change and activation energy are 137.63 and 334.44 kJ/mol, respectively, which will occur at medium temperatures and the corresponding heat effect is great. For the reaction of R3–CH, the enthalpy change and the activation energy are −3.45 and 55.79 kJ/mol, respectively, which will occur at low temperatures while the corresponding heat influence is weak. They both affect heat accumulation and provide new active centers for enhancing the coal self-heating process. The results would be helpful for further understanding of the coal self-heating mechanism.


2003 ◽  
Vol 67 (4) ◽  
pp. 665-670 ◽  
Author(s):  
B. B. Beamish ◽  
J. D. St. George ◽  
M. A. Barakat

AbstractAdiabatic self-heating tests were carried out on five New Zealand coal samples ranging in rank from lignite to high-volatile bituminous. Kinetic parameters of oxidation were obtained from the self-heating curves assuming Arrhenius behaviour. The activation energy E (kJ mol–1) and the pre-exponential factor A (s–1) were determined in the temperature range of 70–140°C. The activation energy exhibited a definite rank relationship with a minimum E of 55 kJ mol–1 occurring at a Suggate rank of ∼6.2 corresponding to subbituminous C. Either side of this rank there was a noticeable increase in the activation energy indicating lower reactivity of the coal. A similar rank trend was also observed in the R70 self-heating rate index values that were taken from the initial portion of the self-heating curve from 40 to 70°C. From these results it is clear that the adiabatic method is capable of providing reliable kinetic parameters of coal oxidation.


2011 ◽  
Vol 24 (15) ◽  
pp. 1645-1650 ◽  
Author(s):  
Barnabe Ngabe ◽  
J. Edwin van der Spuy ◽  
James A. Finch

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.


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