Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

2004 ◽  
Vol 96 (12) ◽  
pp. 7532-7536 ◽  
Author(s):  
Sukti Hazra ◽  
Isao Sakata ◽  
Mitsuyuki Yamanaka ◽  
Eiichi Suzuki
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Raman Spectra ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Method ◽  
Hydrogenated Amorphous ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films

1985 ◽  
Vol 47 (3) ◽  
pp. 236-238 ◽  
Author(s):  
L. S. Hung ◽  
E. F. Kennedy ◽  
C. J. Palmstro/m ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Silicide Formation ◽  
Hydrogenated Amorphous

Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature

1987 ◽  
Vol 62 (4) ◽  
pp. 1425-1428 ◽  
Author(s):  
P. Fiorini ◽  
I. Haller ◽  
J. J. Nocera ◽  
S. A. Cohen ◽  
M. H. Brodsky
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Toward a Practical Model of a-Si:H Defects in Intensity-Time-Temperature Space

1994 ◽  
Vol 336 ◽  
Author(s):  
D. Caputo ◽  
J. Bullock ◽  
H. Gleskova ◽  
S. Wagner
Keyword(s):  
Light Intensity ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Quasi Fermi Level ◽  
Practical Model ◽  
Density Of Defect States ◽  
Hydrogenated Amorphous

ABSTRACTIn this paper we develop a model of the defect kinetics in hydrogenated Amorphous silicon (a:Si:H) with the goal of predicting the density of defect states g (E) established by any given light intensity I, for arbitrary times t and temperatures T. While we build on widely accepted expressions for the the rates of light-induced and thermal annealing, we examine in more detail the light induced annealing (LIA) term. The model shows that the LIA process can be described with the thermal annealing term if a suitable reduction to the annealing energy is introduced. This reduction depends on the light intensity such as to suggest a relation to the shift of the electron quasi-Fermi level under illumination.

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