scholarly journals Metal-ferroelectric-metal structures with Schottky contacts. II. Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films

2005 ◽  
Vol 98 (12) ◽  
pp. 124104 ◽  
Author(s):  
L. Pintilie ◽  
I. Boerasu ◽  
M. J. M. Gomes ◽  
T. Zhao ◽  
R. Ramesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Contacts ◽  
Metal Structures ◽  
Current Voltage ◽  
Capacitance Voltage

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts

2000 ◽  
Vol 51-52 ◽  
pp. 689-693 ◽  
Author(s):  
B Abay ◽  
Y Onganer ◽  
M Saǧlam ◽  
H Efeoǧlu ◽  
A Türüt ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Current Voltage ◽  
Capacitance Voltage

Smart Heterostructures Based on Solid Solution ZnCdHgTe

2003 ◽  
Vol 785 ◽  
Author(s):  
Galina M. Khlyap ◽  
Petro G. Sydorchuk ◽  
Jacek Polit ◽  
Macej Oszwaldowsky
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Spectral Range ◽  
Room Temperature ◽  
Signal Frequency ◽  
Applied Bias ◽  
Current Voltage ◽  
Wide Range ◽  
Capacitance Voltage ◽  
First Time

ABSTRACTCurrent – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

scholarly journals Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

2015 ◽  
Vol 33 (4) ◽  
pp. 669-676 ◽  
Author(s):  
Piotr Firek ◽  
Michał Wáskiewicz ◽  
Bartłomiej Stonio ◽  
Jan Szmidt
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Ion Sensors ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Capacitor

AbstractThis work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

2011 ◽  
Vol 679-680 ◽  
pp. 453-456
Author(s):  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto ◽  
Edvige Celasco ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Structural Evolution ◽  
Schottky Contacts ◽  
Power Losses ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Power Densities

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

Thermally Stable Schottky Contacts TO n-GaN

1998 ◽  
Vol 512 ◽  
Author(s):  
H. S. Venugopalan ◽  
S. E. Mohney
Keyword(s):  
Schottky Diodes ◽  
Schottky Contacts ◽  
Thermally Stable ◽  
Short Term ◽  
Barrier Heights ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe barrier heights of Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The elemental Ni contacts were also investigated for comparison. The Ni/Ga/Ni and Re diodes were stable on short term annealing up to 700 °C. It was also shown that the Ni/Ga/Ni (84 at% Ni, 16 at% Ga) diodes were more stable than Ni diodes. This work provides the first demonstration of Schottky diodes to n-GaN that are stable upon annealing at 700 °C.

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