Residual Stresses in Ta, Mo, Al and Pd Thin Films Deposited by E-Beam Evaporation Process on Si and Si/SiO2 Substrates

Author(s):  
G. Guisbiers
1997 ◽  
Vol 505 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar

ABSTRACTFEM simulation of micro-rotating-structures was performed for local measurement of residual stresses in thin films. A sensitivity factor is introduced, studied and tabulated from the simulation results. The residual stress can be evaluated from the rotating deflection, the lengths of rotating and fixed beams, and the sensitivity factor. The micro-structure technique was applied to measure residual stresses in both silicon nitride and polysilicon thin films, before and after rapid thermal annealing (RTA), and further confirmed by wafer curvature method. Residual stresses in polysilicon films at different RTA stages were also characterized by micro-Raman spectroscopy (MRS). The experimental results indicate that micro-rotating-structures indeed have the ability to measure spatially and locally residual stresses in MEMS thin films with appropriate sensitivities.


2018 ◽  
Vol 59 (1) ◽  
pp. 111-120 ◽  
Author(s):  
I. G. McDonald ◽  
W. M. Moehlenkamp ◽  
D. Arola ◽  
J. Wang

1991 ◽  
Vol 35 (A) ◽  
pp. 439-447
Author(s):  
J. B. Cohen

AbstractThe basic diffraction techniques for examining the stress tensor are reviewed, with particular emphasis on what can be done without knowing the unstressed lattice parameter(s). Examples are given of the residual stresses in thin films, how to measure the bonding and yield stress in composites and separating the micro and macrostresses to examine load sharing between phases.


Micromachines ◽  
2019 ◽  
Vol 10 (10) ◽  
pp. 669
Author(s):  
Zhou ◽  
Meng ◽  
Sun ◽  
Huang

Various multilayered thin films are extensively used as the basic component of some micro-electro-mechanical systems, requiring an efficient measurement method for material parameters, such as Young’s modulus, residual stress, etc. This paper developed a novel measurement method to extract the Young’s moduli and residual stresses for individual layers in multilayered thin films, based on the first resonance frequency measurements of both cantilever beams and doubly-clamped beams. The fabrication process of the test structure, the corresponding modeling and the material parameter extraction process are introduced. To verify this method, the test structures with gold/polysilicon bilayer beams are fabricated and tested. The obtained Young’s moduli of polysilicon films are from 151.38 GPa to 154.93GPa, and the obtained Young’s moduli of gold films are from 70.72 GPa to 75.34GPa. The obtained residual stresses of polysilicon films are from −14.86 MPa to −13.11 MPa (compressive stress), and the obtained residual stresses of gold films are from 16.27 to 23.95 MPa (tensile stress). The extracted parameters are within the reasonable ranges, compared with the available results or the results obtained by other test methods.


2004 ◽  
Vol 19 (10) ◽  
pp. 2822-2833 ◽  
Author(s):  
Bo-Kuai Lai ◽  
H. Kahn ◽  
S.M. Phillips ◽  
Z. Akase ◽  
A.H. Heuer

Phase transformations in near-equiatomic TiNi shape memory alloy thin films were studied, and the phase fraction evolutions were quantitatively correlated to the stress and resistivity of the films. TiNi thin films with compositions of 50.1, 51.1, and 51.7 at.% Ti all exhibited transformation temperatures between 65 and 100 °C, low residual stresses at room temperature (RT), and high recoverable stresses, thus making them suitable for microactuators in microelectromechanical systems. Low residual stresses at RT, less than 50 MPa, can be obtained even when only a small quantity of martensite, less than 30%, is present. Phase fraction evolution during complete thermal cycles (heating and cooling) was studied using elevated temperature x-ray diffraction, combined with quantitative Rietveld analysis. R-phase always appeared in these near-equiatomic TiNi thin films during cooling but did not have a noticeable effect on the stress–temperature hysteresis curves, which mainly depend on the phase fraction evolution of martensite. On the other hand, the occurrence of R-phase determined the variation of film resistivity. Martensite, austenite, and R-phase coexisting within a single grain were observed using transmission electron microscopy.


1995 ◽  
Vol 39 ◽  
pp. 627-635
Author(s):  
I. C. Noyan ◽  
C. C. Goldsmith

Residual stresses are a major factor in the reliable operation of multi-layer thin film structures. These stresses may form due to defect incorporation during deposition, recrystallization, second-phase precipitation, thermal coefficient of expansion (TCE) mismatch, etc., as well as local plastic flow, delamination or cracking. In the literature, residual stresses are usually assumed to be constant in the plane of the film. This assumption is sometimes implicitly made, as in the cases where only two psi-tilts are used in the stress determination with the sin2Ψ analysis.In this paper, we will review the possible causes of heterogeneous stress distributions in thin films and discuss their impact on x-ray stress determination techniques using some new data from W films.


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