Fem Simulation of Micro-Rotating-Structures and Their Applications in Measurement of Residual Stresses in Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Fem Simulation ◽  
Sensitivity Factor ◽  
Local Measurement ◽  
Micro Structure ◽  
Micro Raman Spectroscopy ◽  
Before And After ◽  
Polysilicon Films ◽  
Simulation Results

ABSTRACTFEM simulation of micro-rotating-structures was performed for local measurement of residual stresses in thin films. A sensitivity factor is introduced, studied and tabulated from the simulation results. The residual stress can be evaluated from the rotating deflection, the lengths of rotating and fixed beams, and the sensitivity factor. The micro-structure technique was applied to measure residual stresses in both silicon nitride and polysilicon thin films, before and after rapid thermal annealing (RTA), and further confirmed by wafer curvature method. Residual stresses in polysilicon films at different RTA stages were also characterized by micro-Raman spectroscopy (MRS). The experimental results indicate that micro-rotating-structures indeed have the ability to measure spatially and locally residual stresses in MEMS thin films with appropriate sensitivities.

Rapid Thermal Annealing for Residual-Stress Relaxation in Undoped or Doped Polysilicon Thin Films

1998 ◽  
Vol 546 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress Relaxation ◽  
Residual Stresses ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Evolution ◽  
Before And After ◽  
Polysilicon Films ◽  
Compressive Residual Stresses

AbstractThe residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

scholarly journals A Novel Measurement Method of Mechanical Properties for Individual Layers in Multilayered Thin Films

Micromachines ◽  
2019 ◽  
Vol 10 (10) ◽  
pp. 669
Author(s):  
Zhou ◽  
Meng ◽  
Sun ◽  
Huang
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Measurement Method ◽  
Parameter Extraction ◽  
Extraction Process ◽  
Test Methods ◽  
Gold Films ◽  
Young’S Moduli ◽  
Polysilicon Films ◽  
Multilayered Thin Films

Various multilayered thin films are extensively used as the basic component of some micro-electro-mechanical systems, requiring an efficient measurement method for material parameters, such as Young’s modulus, residual stress, etc. This paper developed a novel measurement method to extract the Young’s moduli and residual stresses for individual layers in multilayered thin films, based on the first resonance frequency measurements of both cantilever beams and doubly-clamped beams. The fabrication process of the test structure, the corresponding modeling and the material parameter extraction process are introduced. To verify this method, the test structures with gold/polysilicon bilayer beams are fabricated and tested. The obtained Young’s moduli of polysilicon films are from 151.38 GPa to 154.93GPa, and the obtained Young’s moduli of gold films are from 70.72 GPa to 75.34GPa. The obtained residual stresses of polysilicon films are from −14.86 MPa to −13.11 MPa (compressive stress), and the obtained residual stresses of gold films are from 16.27 to 23.95 MPa (tensile stress). The extracted parameters are within the reasonable ranges, compared with the available results or the results obtained by other test methods.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Structural, electrical and optical characterizations of yttrium doped aluminum nitride thin films before and after ions irradiation

2021 ◽  
Vol 116 ◽  
pp. 111097
Author(s):  
Asmat Ullah ◽  
Muhammad Usman ◽  
Wang Qingyu ◽  
Iftikhar Ahmad ◽  
Muhammad Maqbool
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Before And After

scholarly journals FEM Simulation of Frequency-Selective Surface Based on Thermoelectric Bi-Sb Thin Films for THz Detection

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 119
Author(s):  
Anastasiia Tukmakova ◽  
Ivan Tkhorzhevskiy ◽  
Artyom Sedinin ◽  
Aleksei Asach ◽  
Anna Novotelnova ◽  
...  
Keyword(s):  
Thin Films ◽  
Response Times ◽  
Fem Simulation ◽  
Film Surface ◽  
Frequency Selective Surface ◽  
Fast Response ◽  
Radiation Absorption ◽  
Thz Radiation ◽  
Frequency Filter ◽  
Frequency Selective

Terahertz (THz) filters and detectors can find a wide application in such fields as: sensing, imaging, security systems, medicine, wireless connection, and detection of substances. Thermoelectric materials are promising basis for THz detectors’ development due to their sensitivity to the THz radiation, possibility to be heated under the THz radiation and produce voltage due to Seebeck effect. Thermoelectric thin films of Bi-Sb solid solutions are semimetals/semiconductors with the band gap comparable with THz energy and with high thermoelectric conversion efficiency at room temperature. Detecting film surface can be transformed into a periodic frequency selective surface (FSS) that can operate as a frequency filter and increases the absorption of THz radiation. We report for the first time about the simulation of THz detector based on thermoelectric Bi-Sb thin-filmed frequency-selective surface. We show that such structure can be both detector and frequency filter. Moreover, it was shown that FSS design increases not only a heating due to absorption but a temperature gradient in Bi-Sb film by two orders of magnitude in comparison with continuous films. Local temperature gradients can reach the values of the order of 100 K·mm−1. That opens new perspectives for thin-filmed thermoelectric detectors’ efficiency increase. Temperature difference formed due to THz radiation absorption can reach values on the order of 1 degree. Frequency-transient calculations show the power dependence of film temperature on time with characteristic saturation at times around several ms. That points to the perspective of reaching fast response times on such structures.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

Finite Element Simulation of Laser Beam Welding Induced Residual Stresses and Distortions in a T-Joint Configuration for Aeronautic Structures

2009 ◽  
Author(s):  
Muhammad Zain-ul-abdein ◽  
Daniel Ne´lias ◽  
Jean-Franc¸ois Jullien ◽  
Dominique Deloison
Keyword(s):  
Finite Element ◽  
Residual Stresses ◽  
Laser Beam ◽  
Boundary Conditions ◽  
Laser Beam Welding ◽  
Temperature Fields ◽  
Heat Transfer Analysis ◽  
Small Scale ◽  
Joint Configuration ◽  
Simulation Results

Laser beam welding has found its application in the aircraft industry for the fabrication of fuselage panels in a T-joint configuration. However, the inconveniences like distortions and residual stresses are inevitable consequences of welding. The effort is made in this work to experimentally measure and numerically simulate the distortions induced by laser beam welding of a T-joint with industrially used thermal and mechanical boundary conditions on the thin sheets of aluminium 6056-T4. Several small scale experiments were carried out with various instrumentations to establish a database necessary to verify the simulation results. Finite element (FE) simulation is performed with Abaqus and the conical heat source is programmed in FORTRAN. Heat transfer analysis is performed to achieve the required weld pool geometry and temperature fields. Mechanical analysis is then performed with industrial loading and boundary conditions so as to predict the distortion and the residual stress pattern. A good agreement is found amongst the experimental and simulation results.

The Study on Young's Modulus of Multilayered Cu/Ni Multilayered Nano Thin Films by Molecular Dynamics Simulation

2014 ◽  
Vol 513-517 ◽  
pp. 113-116
Author(s):  
Jen Ching Huang ◽  
Fu Jen Cheng ◽  
Chun Song Yang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Dynamics ◽  
Molecular Dynamics Simulation ◽  
Strain Rate ◽  
Young’S Modulus ◽  
Potential Function ◽  
Dynamics Simulation ◽  
System Temperature ◽  
Simulation Results

The Youngs modulus of multilayered nanothin films is an important property. This paper focused to investigate the Youngs Modulus of Multilayered Ni/Cu Multilayered nanoThin Films under different condition by Molecular Dynamics Simulation. The NVT ensemble and COMPASS potential function were employed in the simulation. The multilayered nanothin film contained the Ni and Cu thin films in sequence. From simulation results, it is found that the Youngs modulus of Cu/Ni multilayered nanothin film is different at different lattice orientations, temperatures and strain rate. After experiments, it can be found that the Youngs modulus of multilayered nanothin film in the plane (100) is highest. As thickness of the thin film and system temperature rises, Youngs modulus of multilayered nanothin film is reduced instead. And, the strain rate increases, the Youngs modulus of Cu/Ni multilayered nanothin film will also increase.

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

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