Dynamical spin separation induced by spin-dependent type-II band alignment in a diluted magnetic double quantum well

Applied Physics Letters ◽

10.1063/1.2207488 ◽

2006 ◽

Vol 88 (21) ◽

pp. 212106 ◽

Author(s):

T. Koyama ◽

K. Kayanuma ◽

I. Souma ◽

A. Murayama ◽

Y. Oka

Keyword(s):

Quantum Well ◽

Band Alignment ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well ◽

Dynamical Spin ◽

Diluted Magnetic ◽

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Dynamical spin separation in a double quantum well of diluted magnetic semiconductor due to spin-dependent type-II band alignment

Journal of Luminescence ◽

10.1016/j.jlumin.2006.01.301 ◽

2007 ◽

Vol 122-123 ◽

pp. 831-833

Author(s):

T. Koyama ◽

K. Kayanuma ◽

I. Souma ◽

A. Murayama ◽

Y. Oka

Keyword(s):

Quantum Well ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Band Alignment ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well ◽

Dynamical Spin ◽

Diluted Magnetic ◽

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Spin-dependent type-II band alignment and carrier spin dynamics in a diluted magnetic double quantum well

physica status solidi (c) ◽

10.1002/pssc.200672814 ◽

2006 ◽

Vol 3 (12) ◽

pp. 4279-4282

Author(s):

T. Koyama ◽

K. Nishibayashi ◽

I Souma ◽

A. Murayama ◽

Y. Oka ◽

...

Keyword(s):

Quantum Well ◽

Spin Dynamics ◽

Band Alignment ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well ◽

Diluted Magnetic ◽

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Pump-Probe Study of Carrier-Spin Injection in a Diluted Magnetic Double Quantum Well of CdMnTe/CdTe

Journal of the Korean Physical Society ◽

10.3938/jkps.53.175 ◽

2008 ◽

Vol 53 (1) ◽

pp. 175-178

Author(s):

A. Murayama ◽

K. Nishibayashi ◽

N. Kono ◽

K. Saito ◽

I. Souma ◽

...

Keyword(s):

Quantum Well ◽

Spin Injection ◽

Double Quantum ◽

Double Quantum Well ◽

Diluted Magnetic

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AlAs monolayer dependence of the radiative recombination rate in a type II GaAs–AlAs double quantum well

Solid State Communications ◽

10.1016/s0038-1098(00)00044-2 ◽

2000 ◽

Vol 114 (7) ◽

pp. 389-394 ◽

Author(s):

D. Martins ◽

C. Gourdon ◽

P. Lavallard ◽

R. Planel

Keyword(s):

Quantum Well ◽

Recombination Rate ◽

Radiative Recombination ◽

Double Quantum ◽

Type Ii ◽

Radiative Recombination Rate ◽

Double Quantum Well

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Wavefunctions and Optical Gain in $$ \text{In}_{0.3} {\text{Ga}}_{0.7} {\text{As}}/{\text{GaAs}}_{0.4} {\text{Sb}}_{0.6} $$In0.3Ga0.7As/GaAs0.4Sb0.6 Type-II Double Quantum Well Nanoheterostructure Under External Uniaxial Strain

Engineering Vibration, Communication and Information Processing - Lecture Notes in Electrical Engineering ◽

10.1007/978-981-13-1642-5_13 ◽

2018 ◽

pp. 143-151

Author(s):

Amit Kumar Singh ◽

Amit Rathi ◽

Md. Riyaj ◽

P. A. Alvi

Keyword(s):

Quantum Well ◽

Optical Gain ◽

Uniaxial Strain ◽

Double Quantum ◽

Type Ii ◽

Double Quantum Well

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Direct and indirect excitons in diluted magnetic semiconductor double-quantum-well structures in external magnetic fields

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/23/020 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4033-4044 ◽

Author(s):

S B Lev ◽

V I Sugakov ◽

G V Vertsimakha

Keyword(s):

Magnetic Fields ◽

Quantum Well ◽

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

Double Quantum ◽

Quantum Well Structures ◽

Indirect Excitons ◽

Double Quantum Well ◽

Diluted Magnetic

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ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156402001873 ◽

2002 ◽

Vol 12 (04) ◽

pp. 939-968 ◽

Author(s):

Mikhail V. Kisin ◽

Mitra Dutta ◽

Michael A. Stroscio

Keyword(s):

Quantum Well ◽

Semiconductor Lasers ◽

Comprehensive Analysis ◽

Double Quantum ◽

Type I ◽

Type Ii ◽

Scattering Rate ◽

Laser Heterostructures ◽

Double Quantum Well ◽

Electron Relaxation

We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.

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Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/aba379 ◽

2020 ◽

Vol 59 (8) ◽

pp. 080903

Author(s):

Ayaka Shinkawa ◽

Minoru Wakiya ◽

Yuki Maeda ◽

Takahiro Tsukamoto ◽

Nobumitsu Hirose ◽

...

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Thermionic Emission ◽

Resonant Tunneling Diode ◽

Double Quantum ◽

High Resonance ◽

Tunneling Diode ◽

Double Quantum Well ◽

Resonance Current

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Optical absorption in the terahertz region in HgTe/HgCd(Mn)Te double quantum well structures with a topological phase and structural inversion asymmetry

Surface Science ◽

10.1016/j.susc.2020.121780 ◽

2021 ◽

Vol 706 ◽

pp. 121780

Author(s):

M. Marchewka ◽

P. Śliż

Keyword(s):

Optical Absorption ◽

Quantum Well ◽

Double Quantum ◽

Topological Phase ◽

Quantum Well Structures ◽

Terahertz Region ◽

Double Quantum Well ◽

Structural Inversion ◽

Inversion Asymmetry

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

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