Use of quantum-point-contact high-electron-mobility-transistors for time domain multiplexing of large arrays of high impedance low temperature bolometers

Quantum Point Contact ◽

High Electron ◽

High Electron Mobility ◽

High Impedance ◽

Quantum Point

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Pseudomorphic high-electron-mobility transistors with low-temperature-grown GaAs buffers

10.1116/1.588908 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2236 ◽

Cited By ~ 3

Author(s):

T. J. Rogers

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Low Temperature Grown Gaas

Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l826 ◽

1994 ◽

Vol 33 (Part 2, No. 6B) ◽

pp. L826-L829

Author(s):

Leng Seow Tan ◽

Wai Shing Lau ◽

Ganesh Shankar Samudra ◽

Kin Man Lee ◽

Boon Yong Ang

Keyword(s):

Numerical Simulation ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Active Layers

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

Low temperature growth and characterization of silicon delta doped GaInP/GaInAs/GaAs pseudomorphic heterostructures for use in high electron mobility transistors

10.1109/iscs.1998.711570 ◽

1997 ◽

Author(s):

J.A. Smart ◽

E.M. Chumbes ◽

L.F. Eastman ◽

J.R. Shealy

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

High Electron ◽

Temperature Growth ◽

High Electron Mobility ◽

Low Temperature Growth ◽

Electron Mobility Transistors

Low temperature electroluminescence spectroscopy of high electron mobility transistors on InP

Journal of Applied Physics ◽

10.1063/1.362749 ◽

1996 ◽

Vol 80 (1) ◽

pp. 464-469 ◽

Cited By ~ 11

Author(s):

A. Sylvestre ◽

F. Aniel ◽

P. Boucaud ◽

F. H. Julien ◽

P. Crozat ◽

...

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

Applied Physics Letters ◽

10.1063/1.4887368 ◽

2014 ◽

Vol 105 (1) ◽

pp. 013504 ◽

Cited By ~ 29

Author(s):

Q. Dong ◽

Y. X. Liang ◽

D. Ferry ◽

A. Cavanna ◽

U. Gennser ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

Low Noise ◽

High Electron ◽

High Electron Mobility ◽

High Impedance ◽

Ultra Low Noise ◽

Cryogenic Readout Electronics

Low‐temperature dc characteristics of S‐ and Si‐doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106729 ◽

1992 ◽

Vol 60 (25) ◽

pp. 3162-3164 ◽

Cited By ~ 15

Author(s):

A. Ginoudi ◽

E. C. Paloura ◽

G. Kostandinidis ◽

G. Kiriakidis ◽

Ph. Maurel ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Dc Characteristics ◽

Metalorganic Molecular Beam Epitaxy ◽

Si Doped

InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113137 ◽

1995 ◽

Vol 66 (2) ◽

pp. 212-214 ◽

Cited By ~ 12

Author(s):

N. Pan ◽

J. Elliott ◽

H. Hendriks ◽

L. Aucoin ◽

P. Fay ◽

...

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Buffer Layers ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) ◽

Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors

10.1109/transducers.2017.7994166 ◽

2017 ◽

Author(s):

Caitlin A. Chapin ◽

Ruth A. Miller ◽

Ruiqi Chen ◽

Karen M. Dowling ◽

Debbie G. Senesky

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

Pressure Response ◽

High Electron ◽

High Electron Mobility ◽

Temperature And Pressure

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

10.21236/ada614121 ◽

2015 ◽

Author(s):

Adam T. Roberts ◽

Henry O. Everitt

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Low Temperature Photoluminescence

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature

10.1116/1.5134840 ◽

2020 ◽

Vol 38 (2) ◽

pp. 023202 ◽

Cited By ~ 1

Author(s):

Jinjin Tang ◽

Guipeng Liu ◽

Guijuan Zhao ◽

Shu’an Xing ◽

Salamat Ali Malik

Keyword(s):

Low Temperature ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron ◽

Two Dimensional ◽

Dimensional Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors