Characterization of hydrogenated amorphous germanium compounds obtained by x-ray chemical vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order

2007 ◽  
Vol 102 (10) ◽  
pp. 104905 ◽  
Author(s):  
Aldo Arrais ◽  
Paola Benzi ◽  
Elena Bottizzo ◽  
Chiara Demaria
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Irradiation Dose ◽  
Chemical Vapor ◽  
Optical Parameters ◽  
X Ray ◽  
Germanium Compounds ◽  
Hydrogenated Amorphous ◽  
Hydrogenated Amorphous Germanium

scholarly journals AACVD Synthesis and Characterization of Iron and Copper Oxides Modified ZnO Structured Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 471 ◽  
Author(s):  
Martha Claros ◽  
Milena Setka ◽  
Yecid P. Jimenez ◽  
Stella Vallejos
Keyword(s):  
Contact Angle ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Contact Angles ◽  
Copper Oxides ◽  
Water Contact ◽  
X Ray ◽  
Hydrophobic Behavior

Non-modified (ZnO) and modified (Fe2O3@ZnO and CuO@ZnO) structured films are deposited via aerosol assisted chemical vapor deposition. The surface modification of ZnO with iron or copper oxides is achieved in a second aerosol assisted chemical vapor deposition step and the characterization of morphology, structure, and surface of these new structured films is discussed. X-ray photoelectron spectrometry and X-ray diffraction corroborate the formation of ZnO, Fe2O3, and CuO and the electron microscopy images show the morphological and crystalline characteristics of these structured films. Static water contact angle measurements for these structured films indicate hydrophobic behavior with the modified structures showing higher contact angles compared to the non-modified films. Overall, results show that the modification of ZnO with iron or copper oxides enhances the hydrophobic behavior of the surface, increasing the contact angle of the water drops at the non-modified ZnO structures from 122° to 135° and 145° for Fe2O3@ZnO and CuO@ZnO, respectively. This is attributed to the different surface properties of the films including the morphology and chemical composition.

Characterization of Palladium Acetylacetonate as a CVD Precursor for Pd Metallization

1992 ◽  
Vol 282 ◽  
Author(s):  
Steven P. Kowalczyk ◽  
Michael Ldgdlund ◽  
Mats Fahlman ◽  
William R. Salaneck
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Treatment ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
X Ray ◽  
Palladium Acetylacetonate ◽  
Metallic Palladium

ABSTRACTPalladium acetylacctonate has received much consideration as a possible precursor for chemical vapor deposition of metallic palladium films for a variety of microelectronic applications. We have studied the adsorption and decomposition of palladium acetylacetonate ongold, polyimide, silicon and silver surfaces to understand the initial mechanisms of metallic palladium film formation. In situ x-ray photoelcctron spectroscopy was used to characterized the films after adsorption and their decomposition after thermal treatment or laser irradiation.

Laser Optogalvanic Monitoring of SiH in a Chemical Vapor Deposition Glow Discharge

1986 ◽  
Vol 40 (4) ◽  
pp. 494-497 ◽  
Author(s):  
William G. Tong ◽  
Robert W. Shaw
Keyword(s):  
Chemical Vapor Deposition ◽  
Glow Discharge ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Hydride ◽  
Commercial Preparation ◽  
X Ray ◽  
Discharge Cell ◽  
Hydrogenated Amorphous ◽  
Absorption Technique

A demountable hollow cathode discharge cell that is useful for studies of plasmas relevant to chemical vapor deposition (CVD) was assembled and demonstrated. Direct current glow discharge decomposition of 10% silane in helium in this cell at 20 Torr produced silicon-containing cathodic thin films that were subsequently examined with the use of Raman and x-ray fluorescence spectroscopy. A pulsed dye laser-excited optogalvanic detection technique was used to monitor the presence of a transient molecular intermediate—silicon hydride—in this decomposition plasma. An optogalvanic spectrum of the SiH A2δ -X2τ transition near 420 nm is presented. This electronic absorption technique complements other spectroscopic methods for mechanistic studies and optimization of glow discharge CVD plasmas that are currently used for the commercial preparation of technologically important thin film materials such as hydrogenated amorphous silicon. It will be particularly useful for detection of nonluminescent plasma intermediates.

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

2000 ◽  
Vol 338-342 ◽  
pp. 325-328 ◽  
Author(s):  
Yi Hua Wang ◽  
Jian Yi Lin ◽  
Zhe Chuan Feng ◽  
Soo Jin Chua ◽  
Cheng Hon Huan Alfred
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Sic ◽  
Hydrogenated Amorphous ◽  
Sic Films
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